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SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistors

P2N2222A

NPN Silicon

COLLECTOR
1
2
BASE
3
EMITTER

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

40

Vdc

Collector – Base Voltage

VCBO

75

Vdc

Emitter – Base Voltage

VEBO

6.0

Vdc

Collector Current —Continuous

IC

600

mAdc

Total Device Dissipation @ TA = 25°C
Derate above 25°C

PD

625
5.0

mW
mW/°C

Total Device Dissipation @ TC = 25°C
Derate above 25°C

PD

1.5
12

Watts
mW/°C

TJ, Tstg

– 55 to +150

°C

Symbol

Max

Unit

Operating and Storage Junction
Temperature Range

1
2

3

CASE 29–04, STYLE 17
TO–92 (TO–226AA)

THERMALCHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol

Min

Max

Unit

Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)

V(BR)CEO

40

—

Vdc

Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)V(BR)CBO

75

—

Vdc

Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

—

Vdc

Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

ICEX

—

10

nAdc

Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)

ICBO
—
—

0.01
10

Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)

IEBO

—

10nAdc

Collector Cutoff Current
(VCE = 10 V)

ICEO

—

10

nAdc

Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

IBEX

—

20

nAdc

Characteristic

OFF CHARACTERISTICS

Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996

µAdc

1

P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)Characteristic

Symbol

Min

Max

Unit

35
50
75
35
100
50
40

—
—
—
—
300
—
—

—
—

0.3
1.0

0.6
—

1.2
2.0

fT

300

—

MHz

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

8.0

pF

Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

25

pF

2.0
0.25

8.0
1.25

—
—

8.0
4.0

50
75

300
3755.0
25

35
200

ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)

hFE

Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB =50 mAdc)

VCE(sat)

Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

—

VBE(sat)

Vdc

Vdc

SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

kΩ

Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

VoltageFeedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre

Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

Collector Base Time Constant
(IE = 20 mAdc, VCB =20 Vdc, f = 31.8 MHz)

rb′Cc

—

150

ps

NF

—

4.0

dB

(VCC = 30 Vdc, VBE(off) = –2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)

td

—

10

ns

tr

—

25

ns

(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)

ts

—

225

ns

tf

—

60

ns

Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

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