Filtros

BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor

August 1992

BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged andreliable performance and fast switching They can be used with a minimum of effort in most applications requiring up to 500 mA DC This product is particularly suited to low voltage low current applications such as small servo motor controls power MOSFET gate drivers and other switching applications

Features
Y Y Y Y Y

Efficient high density cell design approaching (3 million in2) Voltagecontrolled small signal switch Rugged High saturation current Low RDS(on)

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TO-92 BS170 TO-236AB (SOT-23) MMBF170

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Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage (RGS s 1 MX) Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation Derate above 25 C Operating and StorageTemperature Range Maximum Lead Temperature for Soldering from Case for 10 Seconds Purposes 500 BS170 60 60
g 20

MMBF170

Units V V V

500 800

mA mA mW mW C C C

PD

830 66
b 55 to 150

300 24

TJ TSTG TL

300

C1995 National Semiconductor Corporation

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RRD-B30M115 Printed in U S A

BS170 Electrical Characteristics (TC e 25 C unless otherwise noted)
Symbol OFFCHARACTERISTICS BVDSS IDSS IGSSF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Forward VGS e 0V ID e 100 mA VDS e 25V VGS e 0V VGS e 15V VDS e 0V 60 05 10 V mA nA Parameter Conditions Min Typ Max Units

ON CHARACTERISTICS (Note 1) VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS e VGS ID e 1 mA VGS e 10VID e 200 mA VDS e 10V ID e 200 mA 08 21 12 320 3 5 V X mS

DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS e 10V VGS e 0V f e 1 0 MHz 24 17 7 40 30 10 pF pF pF

SWITCHING CHARACTERISTICS (Note 1) ton toff Turn-On Time Turn-Off Time VDD e 25V ID e 200 mA VGS e 10V RG e 25X 10 10 ns ns

THERMAL CHARACTERISTICS RiJA ThermalResistance Junction to Ambient 150 C W

MMBF170 Electrical Characteristics
Symbol OFF CHARACTERISTICS BVDSS IDSS IGSSF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Forward VGS e 0V ID e 100 mA VDS e 25V VGS e 0V VGS e 15V VDS e 0V 60 05 10 V mA nA Parameter (TC e 25 C unless otherwise noted) Conditions Min Typ Max Units

ON CHARACTERISTICS (Note 1) VGS(th) RDS(on)gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS e VGS ID e 1 0 mA VGS e 10V ID e 200 mA VDS t 2 VDS(on) ID e 200 mA 08 21 12 320 3 5 V X mS

DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS e 10V VGS e 0V f e 1 0 MHz 24 17 7 40 30 10 pF pF pF

SWITCHING CHARACTERISTICS (Note 1) ton toff Turn-OnTime Turn-Off Time VDD e 25V ID e 500 mA VGS e 10V RG e 50X 10 10 ns ns

THERMAL CHARACTERISTICS RiJA Thermal Resistance Junction to Ambient 417 C W

Note 1 Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0%

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Typical Electrical Characteristics
BS170 MMBF170

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FIGURE 1 On-Region Characteristics

FIGURE 2 RDS(on) Variation with Drain Current andGate Voltage

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FIGURE 3 Transfer Characteristics

FIGURE 4 Breakdown Voltage Variation with Temperature

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FIGURE 5 Gate Threshold Variation with Temperature

FIGURE 6 On-Resistance Variation with Temperature

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Typical Electrical Characteristics (Continued)
BS170 MMBF170

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