Fuete Regulada

2SK2843
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2843
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance

: RDS (ON) = 0.54 Ω (typ.)

High forward transfer admittance

Unit: mm

: |Yfs| = 9.0 S (typ.)

Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V,ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)
Characteristics

Symbol

Rating

Unit

Drain−source voltage

VDSS

600

V

Drain−gate voltage (RGS = 20 kΩ)

VDGR

600

V

Gate−source voltage

VGSS

±30

V

(Note 1)

ID

10

A

Pulse (Note 1)

IDP

40

A

Drain power dissipation (Tc = 25°C)

PD

45

W

Single pulse avalanche energy
(Note2)

EAS

363

mJ

Avalanche current

IAR

10

A

Repetitive avalanche energy (Note 3)

EAR

5.0

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Drain current

DC

JEDEC

—

JEITA
TOSHIBA

SC-67
2-10R1B

Weight: 1.9 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/DeratingConcept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch−c)

2.78

°C / W

Thermal resistance, channel to
ambient

Rth (ch−a)

62.5

°C / W

Note 1: Ensure that the channel temperature does not exceed150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.

1

2006-11-08

2SK2843
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−offcurrent
Drain−source breakdown voltage
Gate threshold voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

VGS = ±25 V, VDS = 0 V

—

—

±10

μA

V (BR) GSS

IG = ±10 μA, VDS = 0 V

±30

—

—

V

IDSS

VDS = 600 V, VGS = 0 V

—

—

100

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

600

—

—

V

Vth

VDS = 10 V, ID = 1 mA

2.0—

4.0

V

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 5 A

—

0.54

0.75

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 5 A

3.0

9.0

—

S

Input capacitance

Ciss

—

2040

—

Reverse transfer capacitance

Crss

—

230

—

Output capacitance

Coss

—

590

—

tr

—

22

—

ton

—

58

—

Risetime

Turn−on time

VDS = 10 V, VGS = 0 V, f = 1 MHz

Switching time

pF

ns
Fall time

tf

—

36

—

Turn−off time

toff

—

190

—

Total gate charge (gate−source
plus gate−drain)

Qg

—

45

—

Gate−source charge

Qgs

—

25

—

Gate−drain (“miller”) Charge

Qgd

—

20

—

VDD ≈ 400 V, VGS = 10 V, ID = 10 A

nC

Source−DrainRatings and Characteristics (Ta = 25°C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current
(Note 1)

IDR

—

—

—

10

A

Pulse drain reverse current
(Note 1)

IDRP

—

—

—

40

A

Forward voltage (diode)

VDSF

IDR = 10 A, VGS = 0 V

—

—

−1.7

V

Reverse recovery time

trr

—

1300

—...