Hfgfgfgf

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3903/D

General Purpose Transistors
NPN Silicon

2N3903 2N3904*
*Motorola Preferred Device

COLLECTOR 3 2 BASE 1 EMITTER

1 2 3

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°CTotal Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 60 6.0 200 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to CaseSymbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc

v

v

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs andDiodes Device Data © Motorola, Inc. 1996

1

2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain(1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 VCE(sat) — — VBE(sat) 0.65 — 0.85 0.95 0.2 0.3 Vdc 20 40 35 70 50 100 30 60 1530 — — — — 150 300 — — — — Vdc —

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector – Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base – Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICSCurrent – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3903 2N3904 2N3903 2N3904 hre 2N3903 2N3904 hfe 2N3903 2N3904 hoe NF — — 6.0 5.0 50 100 1.0 200 400 40 0.1 0.5 5.0 8.0 — fT 2N3903 2N3904 Cobo Cibo hie 1.0 1.0 8.0 10 X 10– 4 250 300 — — — — 4.0 8.0 pF pF kΩ MHz

mmhos
dB

SWITCHING CHARACTERISTICS
Delay Time Rise Time StorageTime Fall Time 1. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 2N3903 2N3904 td tr ts tf — — — — — 35 35 175 200 50 ns ns ns ns

v 300 ms; Duty Cycle v 2.0%.

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N3903 2N3904
DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 0 – 0.5 V < 1ns CS < 4 pF* – 9.1 V′ < 1 ns 1N916 CS < 4 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

Figure 2. Storage and Fall Time Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0...