Hojas De Spec

2N6027, 2N6028
Preferred Device

Programmable Unijunction Transistor

Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristorapplications due to the availability of an anode gate. Supplied in an inexpensive TO–92 plastic package for high–volume requirements, this package is readily adaptable for use in automatic insertion equipment. • Programmable — RBB, η, IV and IP • Low On–State Voltage — 1.5 Volts Maximum @ IF = 50 mA • Low Gate to Anode Leakage Current — 10 nA Maximum • High Peak Output Voltage — 11 Volts Typical • LowOffset Voltage — 0.35 Volt Typical (RG = 10 k ohms) • Device Marking: Logo, Device Type, e.g., 2N6027, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating *Power Dissipation Derate Above 25°C *DC Forward Anode Current Derate Above 25°C *DC Gate Current Repetitive Peak Forward Current 100 µs Pulse Width, 1% Duty Cycle *20 µs Pulse Width, 1% Duty Cycle Non–Repetitive Peak ForwardCurrent 10 µs Pulse Width *Gate to Cathode Forward Voltage *Gate to Cathode Reverse Voltage *Gate to Anode Reverse Voltage *Anode to Cathode Voltage(1) Operating Junction Temperature Range *Storage Temperature Range *Indicates JEDEC Registered Data (1) Anode positive, RGA = 1000 ohms Anode negative, RGA = open Symbol PF 1/θJA IT IG ITRM 1.0 2.0 ITSM VGKF VGKR VGAR VAK TJ Tstg 5.0 40 Amps VoltsVolts Volts Volts °C °C Value 300 4.0 150 2.67 Unit mW mW/°C mA mA/°C mA Amps 1 2 3 1 2

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PUTs 40 VOLTS 300 mW

G A K

3

"50

TO–92 (TO–226AA) CASE 029 STYLE 16

PIN ASSIGNMENT
Anode Gate Cathode

*5.0 "40
–50 to +100 –55 to +150 40

ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 7 of this datasheet. Preferred devices are recommended choices for future use and best overall value.

© Semiconductor Components Industries, LLC, 2000

1

May, 2000 – Rev. 2

Publication Order Number: 2N6027/D

2N6027, 2N6028
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes ( 1/16″ fromcase, 10 secs max) Symbol RθJC RθJA TL Max 75 200 260 Unit °C/W °C/W °C

t

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic *Peak Current (VS = 10 Vdc, RG = 1 MΩ) (VS = 10 Vdc, RG = 10 k ohms) *Offset Voltage (VS = 10 Vdc, RG = 1 MΩ) (VS = 10 Vdc, RG = 10 k ohms) *Valley Current (VS = 10 Vdc, RG = 1 MΩ) (VS = 10 Vdc, RG = 10 k ohms) (VS = 10 Vdc, RG = 200 ohms)*Gate to Anode Leakage Current (VS = 40 Vdc, TA = 25°C, Cathode Open) (VS = 40 Vdc, TA = 75°C, Cathode Open) Gate to Cathode Leakage Current (VS = 40 Vdc, Anode to Cathode Shorted) *Forward Voltage (IF = 50 mA Peak)(1) *Peak Output Voltage (VG = 20 Vdc, CC = 0.2 µF) Pulse Voltage Rise Time (VB = 20 Vdc, CC = 0.2 µF) *Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤2%. 2N6027 2N6028 2N6027 2N6028 1 2N6027 2N6028 (Both Types) 1,4,5 2N6027 2N6028 2N6027 2N6028 2N6027 2N6028 — IGAO — — — 1,6 3,7 3 IGKS VF Vo tr — — 6.0 — 1.0 3.0 5.0 0.8 11 40 10 — 50 1.5 — 80 nAdc Volts Volt ns IV — — 70 25 1.5 1.0 18 18 150 150 — — 50 25 — — — — VT 0.2 0.2 0.2 0.70 0.50 0.35 1.6 0.6 0.6 µA Fig. No. 2,9,11 Symbol IP — — — — 1.25 0.08 4.0 0.70 2.0 0.15 5.0 1.0 Volts Min Typ MaxUnit µA

mA nAdc

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2

2N6027, 2N6028
IA +VB A G VAK K R2 – VS = R1 R1 V R1 + R2 B IA + VAK RG = R1 R2 R1 + R2 RG VS VF VV 1A – Programmable Unijunction with “Program” Resistors R1 and R2 1B – Equivalent Test Circuit for Figure 1A used for electrical characteristics testing (also see Figure 2) IGAO IP IV IF VA VS –VP VT = VP – VS

IA

IC – Electrical Characteristics...