Hojas Tecnicas

PN2222A

MMBT2222A

PZT2222A
C

C

E

E
C

C

TO-92

BE

SOT-23

B

B

SOT-223

Mark: 1P

MMPQ2222

E

B

E

B

E

B

SOIC-16

E

NMT2222

B

C2
E1
C1

C

C

C

C

C

C

C

C
B2
E2

SOT-6

B1

Mark: .1B

NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch
requiring collectorcurrents up to 500 mA. Sourced from Process 19.

Absolute Maximum Ratings*
Symbol

TA = 25°C unless otherwise noted

Parameter

Value

Units
V

VCEO

Collector-Emitter Voltage

40

VCBO

Collector-Base Voltage

75

V

VEBO

Emitter-Base Voltage

6.0

V

IC

Collector Current - Continuous

TJ, Tstg

Operating and Storage Junction Temperature Range

1.0A

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

© 1997 Fairchild SemiconductorCorporation

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

Discrete POWER & Signal
Technologies

(continued)

Electrical Characteristics
Symbol

TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO

Collector-Emitter Breakdown Voltage*

I C = 10 mA, IB = 0

40

V

V(BR)CBO

Collector-Base Breakdown VoltageI C = 10 µ A, IE = 0

75

V

V(BR)EBO

Emitter-Base Breakdown Voltage
Collector Cutoff Current

I E = 10 µA, I C = 0
VCE = 60 V, VEB(OFF) = 3.0 V

6.0

ICEX
ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCB = 60 V, IE = 0
VCB = 60 V, I E = 0, TA = 150°C
VEB = 3.0 V, IC = 0

IBL

Base Cutoff Current

VCE = 60 V, VEB(OFF) = 3.0 V

V
10

nA0.01
10
10

µA
µA
nA

20

nA

ON CHARACTERISTICS
hFE

DC Current Gain

VCE(sat )

Collector-Emitter Saturation Voltage*

VBE( sat)

Base-Emitter Saturation Voltage*

SMALL SIGNAL CHARACTERISTICS

I C = 0.1 mA, VCE = 10 V
I C = 1.0 mA, VCE = 10 V
I C = 10 mA, VCE = 10 V
I C = 10 mA, VCE = 10 V, TA = -55°C
I C = 150 mA, VCE = 10 V*
I C = 150 mA, VCE = 1.0 V*
I C = 500mA, VCE = 10 V*
I C = 150 mA, IB = 15 mA
I C = 500 mA, IB = 50 mA
I C = 150 mA, IB = 1.0 mA
I C = 500 mA, IB = 5.0 mA

35
50
75
35
100
50
40

0.6

300

0.3
1.0
1.2
2.0

V
V
V
V

(except MMPQ2222 and NMT2222)

fT

Current Gain - Bandwidth Product

IC = 20 mA, VCE = 20 V, f = 100 MHz

Cobo

Output Capacitance

VCB = 10 V, IE = 0, f = 100 kHz

8.0

pFCibo
rb’CC

Input Capacitance

VEB = 0.5 V, IC = 0, f = 100 kHz

25

pF

Collector Base Time Constant

IC = 20 mA, VCB = 20 V, f = 31.8 MHz

150

pS

NF

Noise Figure

4.0

dB

Re(hie)

Real Part of Common-Emitter
High Frequency Input Impedance

IC = 100 µ A, VCE = 10 V,
RS = 1.0 kΩ , f = 1.0 kHz
IC = 20 mA, VCE = 20 V, f = 300 MHz

60

Ω

10

ns
nsSWITCHING CHARACTERISTICS

300

MHz

(except MMPQ2222 and NMT2222)

td

Delay Time

VCC = 30 V, VBE(OFF) = 0.5 V,

tr

Rise Time

I C = 150 mA, IB1 = 15 mA

25

ts

Storage Time

VCC = 30 V, IC = 150 mA,

225

ns

tf

Fall Time

I B1 = IB2 = 15 mA

60

ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General Purpose Amplifier

(continued)

Thermal Characteristics
Symbol
PD

TA = 25°C unless otherwise noted

Characteristic

Max...