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BC548
BC548A
BC548B
BC548C

E

B

TO-92
C

NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300mA. Sourced from
Process 10. See PN100A for characteristics.

Absolute Maximum Ratings*
Symbol

TA = 25°C unless otherwise noted

Parameter

Value

Units

VCEO

Collector-EmitterVoltage

30

V

VCES

Collector-Base Voltage

30

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current - Continuous

500

mA

TJ, Tstg

Operating and Storage JunctionTemperature Range

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on amaximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal CharacteristicsSymbol
PD

TA = 25°C unless otherwise noted

Characteristic

RθJC

Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction toAmbient

© 1 997 Fairchild Semiconductor Corporation

Max

Units

BC548 / A / B / C
625
5.0
83.3

mW
mW/°C
°C/W

200

°C/W

548-ABC, Rev B

BC548 / BC548A / BC548B / BC548CDiscrete POWER & Signal
Technologies

(continued)

Electrical Characteristics
Symbol

TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min

Max

Units

OFFCHARACTERISTICS
V(BR)CEO

Collector-Emitter Breakdown Voltage

IC = 10 mA, IB = 0

30

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 10 µ A, IE = 0

30

V

V(BR)CES

Collector-BaseBreakdown Voltage

IC = 10 µ A, IE = 0

30

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10 µ A, IC = 0

5.0

V

ICBO

Collector Cutoff Current

VCB = 30 V, IE = 0
VCB =...