Informatica

TIP42 SERIES(TIP42/42A/42B/42C)

TIP42 SERIES(TIP42/42A/42B/42C)
Medium Power Linear Switching Applications
• Complement to TIP41/41A/41B/41C

1

TO-220 2.Collector 3.Emitter

1.Base

PNPEpitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : TIP42 : TIP42A : TIP42B : TIP42C Value - 40 - 60 - 80 - 100 - 40- 60 - 80 - 100 -5 -6 -10 -2 65 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C

VCEO

Collector-Emitter Voltage : TIP42 : TIP42A : TIP42B : TIP42C Emitter-Base Voltage Collector Current(DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC PC TJ TSTG

ElectricalCharacteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : TIP42 : TIP42A : TIP42B : TIP42C Collector Cut-off Current : TIP42/42A : TIP42B/42CCollector Cut-off Current : TIP42 : TIP42A : TIP42B : TIP42C IEBO hFE VCE(sat) VBE(sat) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation VoltageCurrent Gain Bandwidth Product VCE = -40V, VEB = 0 VCE = -60V, VEB = 0 VCE = -80V, VEB = 0 VCE = -100V, VEB = 0 VEB = -5V, IC = 0 VCE = -4V, IC = -0.3A VCE = -4V, IC = -3A IC = -6A, IB = -600mA VCE =-4V, IC = -6A VCE = -10V, IC = -500mA 3.0 30 15 -400 -400 -400 -400 -1 75 -1.5 -2.0 V V MHz
Rev. A, February 2000

Test Condition IC = -30mA, IB = 0

Min. -40 -60 -80 -100

Max.

Units V V VV

ICEO

VCE = -30V, IB = 0 VCE = -60V, IB = 0

-0.7 -0.7

mA mA µA µA µA µA mA

ICES

* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2000 Fairchild Semiconductor International

TIP42SERIES(TIP42/42A/42B/42C)

Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000

-2.0

VCE = -4V

IC /IB = 10
-1.6

hFE, DC CURRENT GAIN

VBE(sat)
-1.2

100

-0.8...