Ingrid

®

2N2219A 2N2222A
HIGH SPEED SWITCHES

DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and lowsaturation voltage. 2N2219A approved to CECC 50002-100, 2N2222A approved to CECC 50002-101 available on request. TO-18 TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symb ol V CBO V CEO V EBO IC P tot Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (I C = 0) Collector Current T otal Dissipation at Tamb ≤ 25 C for 2N2219A for 2N2222A at Tca se ≤ 25 oC for 2N2219A for 2N2222A
o

Value 75 40 6 0.8 0.8 0.5 3 1.8 -65 to 200 175

Un it V V V A W W W W
o o

T s tg Tj June 1999

Storage T emperature Max. Operating Junction Temperature

C C 1/8

2N2219A/2N2222A
THERMAL DATA
TO-39 R thj -case R thj -amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 50 187.5 T O-18 83.3 300
o o

C/W C/WELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l I CBO I CEX I BEX IEBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (VBE = -3V) Base Cut-off Current (V BE = -3V) Emitter Cut-off Current (I C = 0) Test Con ditions V CB = 60 V V CB = 60 V V CE = 60 V V CE = 60 V V EB = 3 V I C = 10 µA 75 T case = 150 o C Min. Typ. Max. 10 10 10 20 10 Unit nA µAnA nA nA V

V (BR) CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V (BR) CEO ∗ Collector-Emitt er Breakdown Voltage (I B = 0) V (BR) EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) V CE(sat) ∗ V BE(sat) ∗ h FE∗ Collector-Emitt er Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain

I C = 10 mA

40

V

I E = 10 µA

6

V

I C = 150 mA I C = 500 mA I C = 150 mA I C =500 mA I C = 0.1 mA I C = 1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 150 mA I C = 10 mA T amb = -55 oC I C = 1 mA I C = 10 mA I C = 20 mA f = 100 MHz IC = 0 IE = 0

I B = 15 mA I B = 50 mA I B = 15 mA I B = 50 mA V CE V CE V CE V CE V CE V CE V CE = 10 V = 10 V = 10 V = 10 V = 10 V =1V = 10 V f = 1KHz f = 1KHz 0.6 35 50 75 100 40 50 35 V CE = 10 V V CE = 10 V V CE = 20 V f = 100KHz f =100 KHz 50 75 300

0.3 1 1.2 2

V V V V

300

h fe ∗ fT C EBO C CBO R e (hie)

Small Signal Current Gain Transition Frequency Emitter Base Capacitance Collector Base Capacitance Real Part of Input Impedance

300 375 MHz 25 8 60 pF pF Ω

V EB = 0.5 V VCB = 10 V

I C = 20 mA f = 300MHz

V CE = 20 V

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

2/8

2N2219A/2N2222AELECTRICAL CHARACTERISTICS (continued)
Symbo l NF hie h re h oe t d ∗∗ t r∗∗ t s ∗∗ t f ∗∗ r bb ’ C b’ c Parameter Noise Figure Input Impedance Reverse Voltage Ratio Output Admittance Delay Time Rise Time Storage T ime Fall T ime Feedback Time Constant Test Con ditions I C = 0.1 mA V CE = 10 V f = 1KHz R g = 1KΩ I C = 1 mA I C = 10 mA I C = 1 mA I C = 10 mA I C = 1 mA I C = 10 mA V CC = 30 V I B1 =15 mA V CC = 30 V I B1 = 15 mA V CE = 10 V VCE = 10 V V CE = 10 V VCE = 10 V V CE = 10 V VCE = 10 V IC = 150 mA VBB = -0.5 V IC = 150 mA VBB = -0.5 V 5 25 2 0.25 Min. Typ. 4 8 1.25 8 4 35 200 10 25 225 60 150 Max. Unit dB kΩ kΩ 10 -4 10 -4 µS µS ns ns ns ns ps

V CC = 30 V I C = 150 mA I B1 = -IB2 = 15 mA V CC = 30 V I C = 150 mA I B1 = -IB2 = 15 mA I C = 20 mA VCE = 20 V f = 31.8MHz

∗Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % ∗∗ See test circuit

3/8

2N2219A/2N2222A
Normalized DC Current Gain. Collector-emitter Saturation Voltage.

Contours of Constant Narrow Band Noise Figure.

Switching Time vs. Collector Current.

4/8

2N2219A/2N2222A
Test Circuit fot td, tr.

PULSE GENERATOR : tr ≤ 20 ns PW ≤ 200 ns ZIN = 50 Ω

TO OSCILLOSCOPE tr ≤ 5.0 ns ZIN < 100...