Jeje
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Publicado: 29 de enero de 2013
®
DB3 /DB4 / DC34
TRIGGER DIODES
FEATURES VBO : 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT
DESCRIPTION High reliability glass passivation insuring parameter stability and protectionagainst junction contamination.
DO 35 (Glass)
ABSOLUTE RATINGS (limiting values) Symbol P Parameter Power dissipation on printed circuit (L = 10 mm) Repetitive peak on-state current Ta = 65 °C tp =20 µs F= 100 Hz Value 150 Unit mW
ITRM
2
A °C °C
Tstg Tj
Storage and operating junction temperature range
- 40 to + 125 - 40 to + 125
THERMAL RESISTANCES Symbol Rth (j-a) Rth(j-l) Junction to ambient Junction-leads Parameter Value 400 150 Unit °C/W °C/W
April 1995
1/4
DB3 / DB4 / DC34
ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test Conditions DB3 VBOBreakover voltage * C = 22nF ** see diagram 1 MIN TYP MAX [I+VBOI-I-VBOI] I∆V± I VO IBO tr IB Breakover voltage symmetry Dynamic breakover voltage * Output voltage * Breakover current * Rise time *Leakage current * C = 22nF ** see diagram 1 ∆I = [IBO to IF=10mA] see diagram 1 see diagram 2 C = 22nF ** see diagram 3 VB = 0.5 VBO max see diagram 1 MAX MIN MIN MAX TYP MAX 100 28 32 36 Value DC34 3034 38 ±3 5 5 50 1.5 10 100 DB4 35 40 45 V V V µA µs µA V Unit
* Electrical characteristic applicable in both forward and reverse directions. ** Connected in parallel with the devices.
DIAGRAM 1: Current-voltage characteristics
DIAGRAM 2 : Test circuit for output voltage
10 k
+ IF 10mA
500 k
D.U.T VO R = 20
220 V 50 Hz 0.1 F
-V
IBO IB 0,5 VBO V
+ V
DIAGRAM 3 :Test circuit see diagram 2. Adjust R for lp=0.5A
lp
VBO
90 %
- IF
10 % tr
2/4
®
DB3 / DB4 / DC34
Fig.1 : Power dissipation versus ambient temperature (maximum values) Fig.2 :Relative variation of VBO versus junction temperature (typical values)
P (mW)
160 140 120 100 80 60 40 20 0
0
1.02 1.04 1.08
VBO[Tj] o VBO[Tj=25 C]
1.06
Tamb ( C)
o
o
Tj( C) 1.00...
DB3 /DB4 / DC34
TRIGGER DIODES
FEATURES VBO : 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT
DESCRIPTION High reliability glass passivation insuring parameter stability and protectionagainst junction contamination.
DO 35 (Glass)
ABSOLUTE RATINGS (limiting values) Symbol P Parameter Power dissipation on printed circuit (L = 10 mm) Repetitive peak on-state current Ta = 65 °C tp =20 µs F= 100 Hz Value 150 Unit mW
ITRM
2
A °C °C
Tstg Tj
Storage and operating junction temperature range
- 40 to + 125 - 40 to + 125
THERMAL RESISTANCES Symbol Rth (j-a) Rth(j-l) Junction to ambient Junction-leads Parameter Value 400 150 Unit °C/W °C/W
April 1995
1/4
DB3 / DB4 / DC34
ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test Conditions DB3 VBOBreakover voltage * C = 22nF ** see diagram 1 MIN TYP MAX [I+VBOI-I-VBOI] I∆V± I VO IBO tr IB Breakover voltage symmetry Dynamic breakover voltage * Output voltage * Breakover current * Rise time *Leakage current * C = 22nF ** see diagram 1 ∆I = [IBO to IF=10mA] see diagram 1 see diagram 2 C = 22nF ** see diagram 3 VB = 0.5 VBO max see diagram 1 MAX MIN MIN MAX TYP MAX 100 28 32 36 Value DC34 3034 38 ±3 5 5 50 1.5 10 100 DB4 35 40 45 V V V µA µs µA V Unit
* Electrical characteristic applicable in both forward and reverse directions. ** Connected in parallel with the devices.
DIAGRAM 1: Current-voltage characteristics
DIAGRAM 2 : Test circuit for output voltage
10 k
+ IF 10mA
500 k
D.U.T VO R = 20
220 V 50 Hz 0.1 F
-V
IBO IB 0,5 VBO V
+ V
DIAGRAM 3 :Test circuit see diagram 2. Adjust R for lp=0.5A
lp
VBO
90 %
- IF
10 % tr
2/4
®
DB3 / DB4 / DC34
Fig.1 : Power dissipation versus ambient temperature (maximum values) Fig.2 :Relative variation of VBO versus junction temperature (typical values)
P (mW)
160 140 120 100 80 60 40 20 0
0
1.02 1.04 1.08
VBO[Tj] o VBO[Tj=25 C]
1.06
Tamb ( C)
o
o
Tj( C) 1.00...
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