Ksc2330

KSC2330

KSC2330
Color TV Chroma Output
• Collector-Base Voltage : VCBO=300V • Current Gain Bandwidth Product : fT=50MHz (TYP.)

1

TO-92L

1. Emitter 2. Collector 3. Base

NPN EpitaxialSilicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base VoltageCollector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 300 300 7 100 1 150 -55 ~ +150 Units V V V mA W °C °C

Electrical Characteristics Ta=25°C unless otherwisenotd
Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC CurrentGain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=5mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VCE=10V, IC=20mA IC=10mA, IB=1mAVCE=30V, IC=10mA VCB=10V, IE=0, f=1MHz 50 4 40 Min. 300 300 7 0.1 240 0.5 V MHz pF Typ. Max. Units V V V µA

hFE Classification
Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240

©2002 FairchildSemiconductor Corporation

Rev. A2, September 2002

KSC2330

Typical Characteristics
20

1000

VCE = 10V

IC[mA], COLLECTOR CURRENT

16

hFE, DC CURRENT GAIN

IB = 120µA IB =100µA IB = 80µA

100

12

8

IB = 60µA IB = 40µA

10

4

IB = 20µA
0 0 20 40 60 80 100 120 1 1 10 100

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. StaticCharacteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10

100

IC = 10 IB

f = 1MHz IE = 0

Cob[pF], CAPACITANCE

1

VBE(sat)

10

0.1

VCE(sat)1

0.01 1 10 100

0.1 1 10 100

IC[mA], COLLECTOR CURRENT

VCB[V], COLLECTOR BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4....