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POWER TRANSISTOR E13001
SWITCHING REGULATOR APPLICATION
• High speed switching • Suitable for switching regulator and motor control • Case : TO-92 molded plastic body
A
DIMSEATING PLANE

TO-92
INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135--0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 ---

R P F L

B

K

G H VD J N C

A B C D F G H J K L N P R V

NPN SILICON TRANSISTOR FEATURES
Tc=25 C unless otherwise specified
o

1 2 3

N

Parameter
Power dissipation Collector currentOperating and storage junction temperature range

Symbol
PCM ICM TJ, TSTG
o

Value
0.75 0.2 -55 C to +150 C
o

UNIT
W A
o

C

ELECTRICAL CHARACTERISTICS
ParameterCollector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DCcurrent gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time

Tc=25 C unless otherwisespecified

o

Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCEsat VBEsat VBE fT tf ts

Test conditions
IC=100¥ì , IE=0 A IC=1mA , IB=0 IE=100¥ì , IC=0 A VCB=600V ,IE=0 VCE=400V , IB=0 VEB=7V , IC=0 VCE=20V , IC=20mA VCE=10V , IC=0.25mA IC=50mA , IB=10mA IC=50mA , IB=10mA IE=100mA VCE=20V , IC=20mA f=1MHz IC=50mA , IB1=-IB2=5mA , VCC=45VMIN
600 400 7

MAX

UNIT
V V V

100 200 100 10 5 0.5 1.2 1.1 8 0.3 1.5 70

¥ì A ¥ì A ¥ì A

V V V MHz

¥ì S ¥ì S

RATINGS AND CHARACTERISTIC CURVES E13001