M3D186

DISCRETE SEMICONDUCTORS

DATA SHEET
book, halfpage

M3D186

BC546; BC547
NPN general purpose transistors
Product specification
Supersedes data of 1997 Mar 04

1999 Apr 15

Philips Semiconductors

Product specification

NPN general purpose transistors

BC546; BC547

FEATURES

PINNING

• Low current (max. 100 mA)

PIN

• Low voltage (max. 65 V).

DESCRIPTION

1base

3

APPLICATIONS

emitter

2

collector

• General purpose switching and amplification.
DESCRIPTION

1
handbook, halfpage

NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC556 and BC557.

3

2
3

2
1

MAM182

Fig.1

Simplified outline (TO-92; SOT54)
and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC134).
SYMBOL
VCBO

PARAMETER
collector-base voltage

CONDITIONS

MIN.

MAX.

UNIT

open emitter

BC546

80

V

−

50

V

−

65

V

−

45

V

BC546

−

6

V

BC547

VCEO

−

BC547
collector-emitter voltage

open base

BC546
BC547
VEBO

emitter-base voltage

open collector
−

6

V

IC

collector current (DC)

−

100

mAICM

peak collector current

−

200

mA

IBM

peak base current

Ptot

total power dissipation

Tstg

−

200

mA

−

500

mW

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

Tamb ≤ 25 °C; note 1

Note
1. Transistor mounted on an FR4 printed-circuit board.1999 Apr 15

2

Philips Semiconductors

Product specification

NPN general purpose transistors

BC546; BC547

THERMAL CHARACTERISTICS
SYMBOL
Rth j-a

PARAMETER

CONDITIONS

thermal resistance from junction to ambient

VALUE
0.25

note 1

UNIT
K/mW

Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector cut-off current

IEBO

emitter cut-off current

hFE

DC current gain

IE = 0; VCB = 30 V

−

−

15

nA

IE = 0; VCB = 30 V; Tj = 150 °C

ICBO

−

−

5

µA

IC = 0; VEB = 5 V

−

−

100

nA

IC = 10 µA; VCE = 5 V;
see Figs 2, 3 and 4

−

90

−

BC546B; BC547B

−

150−

BC547C

−

270

−

BC546A

DC current gain
BC546A

IC = 2 mA; VCE = 5 V;
see Figs 2, 3 and 4

110

180

220

BC546B; BC547B

200

290

450

BC547C

420

520

800

BC547

110

−

800

BC546

110

−

450

VCEsat

collector-emitter saturation
voltage

IC = 10 mA; IB = 0.5 mA

−

90

250

mV

IC = 100 mA; IB = 5 mA

−200

600

mV

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA; note 1

−

700

−

mV

IC = 100 mA; IB = 5 mA; note 1

−

900

−

mV

base-emitter voltage

IC = 2 mA; VCE = 5 V; note 2

580

660

700

mV

IC = 10 mA; VCE = 5 V

VBE

−

−

770

mV

Cc

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

1.5

−pF

−

Ce

emitter capacitance

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

11

−

pF

fT

transition frequency

IC = 10mA; VCE = 5 V; f = 100 MHz 100

−

−

MHz

F

noise figure

IC = 200 µA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz

2

10

dB

Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K withincreasing temperature.

1999 Apr 15

3

−

Philips Semiconductors

Product specification

NPN general purpose transistors

BC546; BC547

MBH723

250

handbook, full pagewidth

hFE
200
VCE = 5 V

150

100

50

0
10−2

10−1

1

102

10

IC (mA)

103

BC546A.

Fig.2 DC current gain; typical values.

MBH724

300

handbook, full pagewidth

VCE =...