Microwind
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Publicado: 27 de noviembre de 2010
Microwind & Dsch Version 3.0
User's Manual Lite Version
Etienne Sicard
1
14/03/04
MICROWIND & DSCH V3.0 - LITE USER'S MANUAL
1. Introduction
About the author
ETIENNE SICARD was born in Paris, France, in June 1961. He received a B.S degree in 1984 and a PhD in Electrical Engineering in 1987 both from the University of Toulouse. He was granted a Monbusho scholarship andstayed 18 months at the University of Osaka, Japan. Previously a professor of electronics in the department of physics, at the University of Balearic Islands, Spain, E. Sicard is currently a professor at the INSA Electronic Engineering School of Toulouse. His research interests include several aspects of design of integrated circuits including crosstalk fault tolerance, and electromagneticcompatibility of integrated circuits. Etienne SICARD is the author of several commercial software in the field of microelectronics and sound processing.
Copyright
© Copyright 1997-2004 by INSA, licensed to
About
Address
Web information
2
14/03/04
MICROWIND & DSCH V3.0 - LITE USER'S MANUAL
1. Introduction
Table of Contents
1 2
Introduction &Installation.................................................................................................................. 6
INSTALLATION ............................................................................................................................................... 7
The MOSdevice.................................................................................................................................... 8
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 Logic Levels ................................................................................................................................................ 8 The MOS as a switch................................................................................................................................... 8MOS layout.................................................................................................................................................. 9 Vertical aspect of the MOS........................................................................................................................ 10 Static Mos Characteristics......................................................................................................................... 11 Dynamic MOS behavior ............................................................................................................................ 11 Analog Simulation ..................................................................................................................................... 12 Layoutconsiderations................................................................................................................................ 13 The MOS Models ...................................................................................................................................... 14 The PMOS Transistor................................................................................................................................ 16 The Transmission Gate .............................................................................................................................. 17 Features in the full version ........................................................................................................................ 18 The Logic Inverter..................................................................................................................................... 19 THE CMOS INVERTER .......................................................................................................................... 20 MANUAL LAYOUT OF THE INVERTER............................................................................................ 21 Connection between...
User's Manual Lite Version
Etienne Sicard
1
14/03/04
MICROWIND & DSCH V3.0 - LITE USER'S MANUAL
1. Introduction
About the author
ETIENNE SICARD was born in Paris, France, in June 1961. He received a B.S degree in 1984 and a PhD in Electrical Engineering in 1987 both from the University of Toulouse. He was granted a Monbusho scholarship andstayed 18 months at the University of Osaka, Japan. Previously a professor of electronics in the department of physics, at the University of Balearic Islands, Spain, E. Sicard is currently a professor at the INSA Electronic Engineering School of Toulouse. His research interests include several aspects of design of integrated circuits including crosstalk fault tolerance, and electromagneticcompatibility of integrated circuits. Etienne SICARD is the author of several commercial software in the field of microelectronics and sound processing.
Copyright
© Copyright 1997-2004 by INSA, licensed to
About
Address
Web information
2
14/03/04
MICROWIND & DSCH V3.0 - LITE USER'S MANUAL
1. Introduction
Table of Contents
1 2
Introduction &Installation.................................................................................................................. 6
INSTALLATION ............................................................................................................................................... 7
The MOSdevice.................................................................................................................................... 8
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 Logic Levels ................................................................................................................................................ 8 The MOS as a switch................................................................................................................................... 8MOS layout.................................................................................................................................................. 9 Vertical aspect of the MOS........................................................................................................................ 10 Static Mos Characteristics......................................................................................................................... 11 Dynamic MOS behavior ............................................................................................................................ 11 Analog Simulation ..................................................................................................................................... 12 Layoutconsiderations................................................................................................................................ 13 The MOS Models ...................................................................................................................................... 14 The PMOS Transistor................................................................................................................................ 16 The Transmission Gate .............................................................................................................................. 17 Features in the full version ........................................................................................................................ 18 The Logic Inverter..................................................................................................................................... 19 THE CMOS INVERTER .......................................................................................................................... 20 MANUAL LAYOUT OF THE INVERTER............................................................................................ 21 Connection between...
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