modulador am
Balanced Modulators/
Demodulators
These devices were designed for use where the output voltage is a
product of an input voltage (signal) and a switching function (carrier).
Typical applications include suppressed carrier and amplitude
modulation, synchronous detection, FM detection, phase detection,
and chopper applications. See ON Semiconductor Application Note
AN531 foradditional design information.
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Features
1
• Excellent Carrier Suppression −65 dB typ @ 0.5 MHz
•
•
•
•
•
SOIC−14
D SUFFIX
CASE 751A
14
−50 dB typ @ 10 MHz
Adjustable Gain and Signal Handling
Balanced Inputs and Outputs
High Common Mode Rejection −85 dB Typical
This Device Contains 8 Active Transistors
Pb−Free Package is Available*
PDIP−14
PSUFFIX
CASE 646
14
1
PIN CONNECTIONS
Signal Input 1
14 VEE
Gain Adjust 2
13 N/C
Gain Adjust 3
12 Output
Signal Input 4
11 N/C
Bias 5
Output 6
N/C 7
10 Carrier Input
9 N/C
8 Input Carrier
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
DEVICE MARKING INFORMATION
Seegeneral marking information in the device marking
section on page 12 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 9
1
Publication Order Number:
MC1496/DMC1496, MC1496B
0
Log Scale Id
IC = 500 kHz
IS = 1.0 kHz
20
40
IC = 500 kHz, IS = 1.0 kHz
60
Figure 1. Suppressed Carrier Output
Waveform
499 kHz
500 kHz
501 kHz
Figure 2. Suppressed Carrier Spectrum
10
IC = 500 kHz
IS = 1.0 kHz
Linear Scale
8.0
6.0
4.0
2.0
IC = 500 kHz
IS = 1.0 kHz
0
499 kHz
Figure 3. Amplitude Modulation
Output Waveform
500 kHz501 kHz
Figure 4. Amplitude−Modulation Spectrum
MAXIMUM RATINGS (TA = 25°C, unless otherwise noted.)
Symbol
Value
Unit
DV
30
Vdc
Differential Input Signal
V8 − V10
V4 − V1
+5.0
±(5 + I5Re)
Vdc
Maximum Bias Current
I5
10
mA
RqJA
100
°C/W
TA
0 to +70
−40 to +125
°C
Storage Temperature Range
Tstg
−65 to +150
°CElectrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
Rating
Applied Voltage
(V6−V8, V10−V1, V12−V8, V12−V10, V8−V4, V8−V1, V10−V4, V6−V10, V2−V5, V3−V5)
Thermal Resistance, Junction−to−Air
Plastic Dual In−Line Package
Operating Ambient Temperature Range
MC1496
MC1496B
V
2000
400
Maximum ratings are those values beyond which device damage canoccur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
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2
MC1496, MC1496B
ELECTRICAL CHARACTERISTICS (VCC = 12 Vdc, VEE = −8.0 Vdc, I5 = 1.0 mAdc, RL =3.9 kW, Re = 1.0 kW, TA = Tlow to Thigh,
all input and output characteristics are single−ended, unless otherwise noted.) (Note 1)
Characteristic
Fig.
Min
Typ
Max
fC = 1.0 kHz
fC = 10 MHz
Symbol
5
−
−
40
140
−
−
fC = 1.0 kHz
fC = 1.0 kHz
Carrier Feedthrough
VC = 60 mVrms sine wave and
offset adjusted to zero
VC = 300 mVpp square wave:
offset adjusted tozero
offset not adjusted
Note
1
VCFT
−
−
0.04
20
Unit
0.4
200
mVrms
mVrms
Carrier Suppression
fS = 10 kHz, 300 mVrms
fC = 500 kHz, 60 mVrms sine wave
fC = 10 MHz, 60 mVrms sine wave
5
2
Transadmittance Bandwidth (Magnitude) (RL = 50 W)
Carrier Input Port, VC = 60 mVrms sine wave
fS = 1.0 kHz, 300 mVrms sine wave
Signal Input Port, VS = 300 mVrms sine...
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