Mosfet

IRF640N/IRF640NS/IRF640NL

January 2002

IRF640N/IRF640NS/IRF640NL
N-Channel Power MOSFETs 200V, 18A, 0.15Ω
Features
• Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

DRAIN (FLANGE)

DRAIN(FLANGE)

SOURCE DRAIN GATE

SOURCE DRAIN GATE D

GATE SOURCE DRAIN (FLANGE) G

TO-263

TO-262

TO-220

S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipationDerate above 25oC Operating and Storage Temperature Ratings 200 ±20 18 13 Figure 4 247 150 1.0 -55 to 175 Units V V A A A mJ W W/oC oC

ID

EAS PD TJ, TSTG

Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.0 62 40oC/W oC/W oC/W

Package Marking and Ordering Information
Device Marking 640N 640N 640N Device IRF640NS IRF640NL IRF640N Package TO-263AB TO-262AA TO-220AB Reel Size 330mm Tube Tube Tape Width 24mm N/A N/A Quantity 800 units 50 50

©2002 Fairchild Semiconductor Corporation

Rev. B

IRF640N/IRF640NS/IRF640NL

Electrical Characteristics TA = 25°C unless otherwise noted
Symbol ParameterTest Conditions Min Typ Max Units

Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 200V, VGS = 0V VDS = 160V VGS = ±20V TC = 150o 200 25 250 ±100 V µA nA

On Characteristics
VGS(TH) rDS(ON) gfs Gate to Source Threshold Voltage Drain to Source On Resistance Forward TransconductanceVGS = VDS, ID = 250µA ID = 11A, VGS = 10V VDS = 50V, ID = 11A (Note 2) 2 6.8 0.102 4 0.15 V Ω
S

Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(10) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 20V Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 0V to 20V VGS = 0V to 10V V=100V DD VGS = 0V to 2V ID = 22A Ig = 1.0mA VDS = 25V, VGS = 0V, f = 1MHz 2200 400 120 117 64 5 9 24 152 83 7 pF pF pF nC nC nC nC nC

Switching Characteristics (VGS = 10V)
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 100V, ID = 11A VGS = 10V, RGS = 2.5Ω 10 19 23 5.5 44 46 ns ns ns ns ns ns

Drain-Source DiodeCharacteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 11A ISD = 11A, dISD/dt = 100A/µs ISD = 11A, dISD/dt = 100A/µs 1.3 251 1394 V ns nC

Notes: 1: Starting TJ = 25°C, L = 4.2mH, IAS = 11A. 2: Pulse width ≤ 400µs; duty cycle ≤ 2%.

©2002 Fairchild Semiconductor Corporation

Rev. B

IRF640N/IRF640NS/IRF640NL

Typical Characteristic
1.220

POWER DISSIPATION MULTIPLIER

1.0 15 0.8 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 175

0.6

10

0.4

5

0.2

0 TC , CASE TEMPERATURE (oC)

0 25 50 75 100 125
o

150

175

TC, CASE TEMPERATURE ( C)

Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01

Figure 2. MaximumContinuous Drain Current vs Case Temperature

ZθJC, NORMALIZED

PDM 0.1 t1 t2 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 100 101 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance
300

TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

IDM, PEAK CURRENT (A)

100...