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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N4150; 1N4151 High-speed diodes
Product specification Supersedes data of 1996 Sep 03 1999 Jun 01

Philips Semiconductors

Product specification

High-speed diodes
FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 50 V • Repetitivepeak reverse voltage: max. 75 V • Repetitive peak forward current: max. 600 mA and 450 mA respectively.
The marking band indicates the cathode.
handbook, halfpage k

1N4150; 1N4151
DESCRIPTION The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.

a

MAM246

APPLICATIONS •High-speed switching • 1N4150: general purpose use in computer and industrial applications • 1N4151: military and industrial applications.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current 1N4150 1N4151IFRM repetitive peak forward current 1N4150 1N4151 IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 500 +200 200 A A A mW °C °C − − 600 450mA mA see Fig.2; note 1 − − 300 200 mA mA CONDITIONS − − MIN. MAX. 75 50 V V UNIT

1999 Jun 01

2

Philips Semiconductors

Product specification

High-speed diodes
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage 1N4150 see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA 1N4151 IR reverse current 1N4150 1N4151 IR reversecurrent 1N4150 1N4151 Cd diode capacitance 1N4150 1N4151 trr reverse recovery time 1N4150 when switched from IF = 10 mA to IR = 1 mA; RL = 100 Ω; measured at IR = 0.1 mA; see Fig.7 when switched from IF = 10 mA to 200 mA to IR = 10 mA to 200 mA; RL = 100 Ω; measured at IR = 0.1 × IF; see Fig.7 when switched from IF = 200 mA to 400 mA to IR = 200 mA to 400 mA; RL = 100 Ω; measured at IR = 0.1 × IF;see Fig.7 trr reverse recovery time 1N4151 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 tfr forward recovery time when switched to IF = 200 mA; tr = 0.4 ns; measured at VF = 1 V; see Fig.8 f = 1 MHz; VR = 0; see Fig.6 − − − − VR = 50 V; Tj = 150 °C; see Fig.5 − −IF = 50 mA VR = 50 V; see Fig.5 − − CONDITIONS

1N4150; 1N4151

MIN. 540 660 760 820 870 −

MAX. 620 740 860 920 1000 1000 0.1 0.05 100 50 2.5 2 6 4

UNIT mV mV mV mV mV mV µA µA µA µA pF pF ns ns

−

6

ns

− −

4 2

ns ns

−

10

ns

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. 1999 Jun 013 PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 350 UNIT K/W K/W

Philips Semiconductors

Product specification

High-speed diodes
GRAPHICAL DATA
MBG456

1N4150; 1N4151

handbook, halfpage

400

handbook, halfpage

600

MGD291

IF (mA) 300
(1)

IF (mA)400
(1) (2)

200

(2)

200

100

0 0 100 Tamb (oC) 200

0 0 1 VF (V) 2

Device mounted on an FR4 printed-circuit board; lead length 10 mm. (1) 1N4150. (2) 1N4151.

(1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values.

Fig.2

Maximum permissible continuous forward current as a function of ambient temperature.

Fig.3

Forward current as a function of forward...