Nte 317

NTE317
Silicon NPN Transistor
RF Power Output
Description:
The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improvedmetallization systems to achieve extreme ruggedness under severe
operating conditions.
Features:
D 70W Minimum with Greater than 13.5dB Gain
D Withstands Severe Mismatch under Operating ConditionsD Emitter Ballasted
D Low Inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter–Base Voltage,VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Device Dissipation (+25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .220W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8°C/W
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°CElectrical Characteristics:
Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1

18

–

–

VCollector–Emitter Breakdown Voltage V(BR)CES IC = 20mA, VBE = 0, Note 1

36

–

–

V

Emitter–Base Breakdown Voltage

4

–

–

V
mA

V(BR)EBO IE = 5mA, IC = 0

Collector Cut–Off...