Nutricion

S T U/D2030P LS
S amHop Microelectronics C orp.

Aug 20 2005

P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-30V

F E AT UR E S S uper high dense cell design for low R DS (ON ).

ID
-20A

R DS (ON) ( m W ) Max
32 @ V G S = -10V 55 @ V G S = -4.5V

R ugged and reliable. TO-252 and TO-251 P ackage.
D

D G S
G D

S

G

S TU S E R IE STO-252AA(D-P AK)

S TU S E R IE S TO-251(l-P AK)

S

ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc=25 C a -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit-30 20 -20 -60 -20 50 -55 to 175 Unit V V A A A W C

THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1

R JC R JA

3 50

C /W C /W

S T U/D2030P LS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
5

S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
bCondition
V GS = 0V, ID = -250uA V DS = -20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID = -20A V GS =-4.5V, ID = -10A V DS = -10V, V GS = -10V V DS = -10V, ID= -10A

Min Typ C Max Unit
-25 -1 V uA 100 nA -1 -1.7 27 41 -30 14 950 250 170 2.6 10 22 68.8 38.5 18.5 9.6 1.6 5.8 -3 32 55 V
m ohm m ohm

OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage ZeroGate Voltage Drain Current Gate-Body Leakage

ON CHAR ACTE R IS TICS a
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance

A S
PF PF PF

DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =-15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = -15V ID = -1 AV GS = -10V R GE N = 6 ohm V DS =-15V, ID = -20A V GS =-10V

ohm

S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-S ource Charge Gate-Drain Charge

tD(ON) tr tD(OFF) tf Qg Q gs Q gd

ns ns ns ns nC nC nC nC

2

S T U/D2030P LS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwisenoted)
Parameter
Diode Forward Voltage

S ymbol
VSD

Condition
V GS = 0V, Is = -10A

Min Typ Max Unit
-0.9 -1.3 V

DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
25 V G S =-4V 20

-I D , Drain C urrent(A)

20
V G S =-5V V G S =-8V V G S =-10V

15

-I D , Drain Current (A)

V G S =-4.5V

15

10 T j=125 C 5 25 C 0

10 5 0

V G S =-3V

-55 C

0

0.5

1

1.5

2

2.5

3

0

0.7

1.4

2.1

2.8

3.5

4.2

-V DS , Drain-to-S ource Voltage (V )

-V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics
60 1.6

F igure 2. Trans fer C haracteris tics

R DS (ON) , On-R es is tance Normalized

501.4 1.2 1.0 0.8 0.6 0.4 -55

R DS (on) (m W)

V G S =-4.5V 40 30 20 10 0 V G S =-10V

V G S =-10V I D =-20A

V G S =-4.5V I D =-10A

0

5

10

15

20

25

-25

0

25

50

75

100 125
T j( C )

-I D , Drain C urrent (A)

T j, J unction T emperature ( C )

F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage

F igure 4. On-R es is tanceVariation with Drain C urrent and Temperature

3

S T U/D2030P LS
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =-250uA

6

T j, J unction T emperature ( C )

T j, J unction...