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Features
!MECHANICALLY !BLUE

®
T-1 3/4 (5mm) INFRA-RED EMITTING DIODE
L53F3BT

AND SPECTRALLY MATCHED

TO THE L51P3C PHOTOTRANSISTOR.TRANSPARENT LENS AVAILABLE HIGH Package Dimensions POWER OUTPUT.

Description
F3 Made with Gallium Arsenide Infrared Emitting diodes.

Notes: 1. All dimensionsare in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specificationsare subjected to change without notice.

Selection Guide
Par t No . Dic e L en s Ty p e Iv (m W/s r ) @20m A Min. L53F 3B T GaAs Blue Transparent 5 Typ. 20 Iv(m W/s r ) @50m A Min. 8 Typ. 30 V i ew i n g An g l e 2θ1/2 30 °

Note: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 theoptical centerline value.

L53F3BT-V.1#1

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It em Forward Voltage Reverse Current Junction Capacitance Peak Spectral Wavelength Spectral Bandwidth®

Electrical / Optical Characteristics at T)=25°C °
P/N F3 F3 F3 F3 F3 Sy m b o l VF IR Co lR ∆λ Ty p . 1.2 90 9 40 50 Max . 1.5 10 Un it V uA pF nm nm Con d it io n IF=20mA VR=5V V=0 f=1MHz IF=20mA IF=20mA

Absolute Maximum Ratings at T)=25°C °
It em
Power Dissipation Forward Current Peak Forward CurrentReverse Voltage Operating Temperature Storage Temperature

Sy m b o l
Pd IF I
P

Max im u m Rat in g
100 50 1.2 5 -45~ +80 -45~ +80

Un it s
mW mA A V °C°C

VR Topr Tstg

Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 4mm below package base.

L53F3BT-V.1#2

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L53F3BT

®

L53F3BT-V.1#3