TIC236 SERIES SILICON TRIACS
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High Current Triacs 12 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3)
MT1 MT2 G
TO-220 PACKAGE (TOPVIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC236D Repetitive peakoff-state voltage (see Note 1) TIC236M TIC236S TIC236N Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) Peak on-state surge current full-sine-wave at (or below) 25°Ccase temperature (see Note 3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) ITSM IGM TC Tstg TL VDRM SYMBOL VALUE400 600 700 800 12 100 ±1 -40 to +110 -40 to +125 230 A A A °C °C °C V UNIT
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. Thisvalue applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 300 mA/°C. 3. This value applies for one 50-Hz full-sine-wavewhen the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER IDRM Repetitive peak off-state current Gate trigger current VD = Rated VDRM Vsupply = +12 V† IGT Vsupply = +12 V†Vsupply = -12 V† Vsupply = -12 V† Vsupply = +12 V† VGT Gate trigger voltage On-state voltage Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† VT ITM = ±17 A TEST CONDITIONS IG = 0 RL = 10 Ω RL = 10 Ω RL =10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω IG = 50 mA TC = 110°C tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs (see...
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