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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

Small Signal Diode
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM
TA = 25°C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature RangeOperating Junction Temperature

Value
100 200 1.0 4.0 -65 to +200 175

Units
V mA A A °C °C

Tstg TJ

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involvingpulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJA

Characteristic
Power Dissipation Thermal Resistance, Junction to Ambient

Max
1N/FDLL 914/A/B / 4148 / 4448 500 300

Units
mW °C/W

2002 Fairchild Semiconductor Corporation

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

Small Signal Diode
(continued)Electrical Characteristics
Symbol
VR VF

TA = 25°C unless otherwise noted

Parameter
Breakdown Voltage Forward Voltage 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448

Test Conditions
IR = 100 µA IR = 5.0 µA IF = 5.0 mA IF = 5.0 mA IF = 10 mA IF = 20 mA IF = 20 mA IF = 100 mA VR = 20 V VR = 20 V, TA = 150°C VR = 75 V VR = 0, f = 1.0 MHz VR = 0, f = 1.0 MHz IF = 10 mA,VR = 6.0 V (60mA), Irr = 1.0 mA, RL = 100Ω

Min
100 75 620 630

Max

Units
V V mV mV V V V V nA µA µA pF pF ns

IR

Reverse Current

720 730 1.0 1.0 1.0 1.0 25 50 5.0 2.0 4.0 4.0

CT

Total Capacitance 1N916A/B/4448 1N914A/B/4148 Reverse Recovery Time

trr

Typical Characteristics
160

Ta=25 C

o

120

T a= 25 C

o

Reverse Voltage, VR [V]

150

ReverseCurrent, IR [nA]

100

80

140

60

130

40

120

20

110 1 2 3 5 10 20 30 50 100

0

10

R everse V oltage, V R [V]

20

30

50

70

100

Reverse Current, IR [uA]

GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature

Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA

Figure 2.Reverse Current vs Reverse Voltage IR - 10 to 100 V

550

750

Ta= 25 C

o

Ta= 25 C

o

Forward Voltage, VR [mV]

450

Forward Voltage, V [mV] F

500

700

650

400

600

350

550

300

500

250

450 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10

Forward Current, IF [uA]

Forward Current, I F [m A]

Figure 3. Forward Voltage vs Forward Current VF- 1 to 100 uA

Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

Small Signal Diode
(continued)

Typical Characteristics

(continued)

1.6

900

Ta= 25 C

o

Forward Voltage, V F [mV]

800

Typical Ta= -40 C
o

Forward Voltage, VF [mV]

1.4

700

1.2

600

Ta= 25 C

o

1.0

500

Ta= +65 C

o400

0.8

300 0.6 10 20 30 50 100 200 300 500 800 0.01 0.03 0.1 0.3 1 3 10

Forward Current, IF [mA]

Forward Current, IF [mA]

Figure 5. Forward Voltage vs Forward Current VF - 10 to 800 mA

Figure 6. Forward Voltage vs Ambient Temperature VF - 0.01 - 20 mA (-40 to +65 Deg C)
4.0

0.90

Reverse Recovery Time, t rr [ns]

TA = 25 C

o

Ta = 25 C

o

3.5

TotalCapacitance (pF)

0.85

3.0

2.5

0.80

2.0

1.5

0.75 0 2 4 6 8 10 12 14

1.0 10 20 30 40 50 60

REVERSE VOLTAGE (V)

Reverse Recovery Current, Irr [mA]
IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms

Figure 7. Total Capacitance

Figure 8. Reverse Recovery Time vs Reverse Recovery Current

500

500

400

Power Dissipation, P [mW] D

400

DO-35

Current (mA)

300...