Poli

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER

D13002E
Characteristic/features
¡ô ¡ô ¡ô ¡ô High breakdown voltage High current capability High switching speed High reliability

Application¡ô ¡ô ¡ô ¡ô ¡ô Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit

Description
3DD13002E is a silicon npnpower transistor.

The main process include high voltage planer process,triple difussion process and multisurface passivation.

Absolute maximum ratings (Tc=25¡æ )
ITEM Collector-base voltageCollector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Junction temperature SYMBOL VCBO VCEO VEBO Ic Pc Tj Tstg RATING 600 400 9 1.0 20 150 -55~+150 ¡æ¡æ UNITS V V V A W

2005.02 1/6

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Electrical charactristics (Tc=25¡æ )
Item Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltageCollector-base Cutoff current Collector-emitter Cutoff current Emitter-base Cutoff current DC current gain Collector-emitter Saturation voltage Base-emitter Saturation voltage Fall time Storage time Transitionfrequency Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO HFE1 HFE2 Testing term Ic=10mA,IB=0 Ic=1mA,IB=0 IE=1mA,Ic=0 VCB=580V, IE=0 VCE=400V,IB=0 VEB=7V, IC=0 VCE=10V, VCE=5V, IC=50mA IC=1A IB=20mAIB=0.1A IB=20mA 8 3.5 0.5 0.8 1.2 0.7 4 4 ¦Ì ¦Ì V S S V Min 400 600 9 5 10 5 40 ¦Ì ¦Ì ¦Ì Max Units V V V A A A

VCE(sat)(1) IC=100mA, VCE(sat)(2) IC=0.5A, VBE(sat) tf ts fT IC=100mA,

VCC=24VIC=0.1A, IB1=-IB2=0.02A VCC=24V IC=0.1A, IB1=-IB2=0.02A VCE=10V, Ic=20mA

MHz

Thermal charactristics
Item Thermal resistance Junction to case Rth(j-c) Symbol Min Max 6.25 Units ¡æ /W

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Typical characteristics:

Base-emitter saturation voltage

2005.02 3/6

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Units£º

mm

2005.02 4/6

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NOTES
1. Jilin Sino-microelectronics co., Ltd...