Proyectos

MPS2222, MPS2222A
MPS2222A is a Preferred Device

General Purpose
Transistors
NPN Silicon
http://onsemi.com

Features

• Pb−Free Packages are Available*

COLLECTOR
3

MAXIMUM RATINGS
Rating

Symbol

Collector −Emitter Voltage

Value

VCEO
MPS2222
MPS2222A

Collector −Base Voltage

Vdc
30
40

1
EMITTER

VCBO
MPS2222
MPS2222A

Emitter −Base Voltage

2BASE

Unit

Vdc
60
75

VEBO
MPS2222
MPS2222A

Vdc
5.0
6.0

Collector Current − Continuous

IC

Total Device Dissipation
@ TA = 25°C
Derate above 25°C

PD

Total Device Dissipation
@ TC = 25°C
Derate above 25°C

PD

Operating and Storage Junction
Temperature Range

mAdc

625
5.0

mW
mW/°C

1.5
12
TJ, Tstg

600

W
mW/°C

−55 to +150

TO−92
CASE 29STYLE 1

°C

12

1

3
STRAIGHT LEAD
BULK PACK

2

3
BENT LEAD
TAPE & REEL
AMMO PACK

MARKING DIAGRAMS

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance, Junction−to−Case

RqJC

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratingsare stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

MPS2222

MPS2222A

MPS
2222
AYWW G
G

MPS2
222A
AYWW G
G

A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 3

1Preferred devices are recommended choices for future use
and best overall value.

Publication Order Number:
MPS2222/D

MPS2222, MPS2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)

MPS2222
MPS2222A

V(BR)CEO

30
40

−
−

VdcCollector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)

MPS2222
MPS2222A

V(BR)CBO

60
75

−
−

Vdc

Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)

MPS2222
MPS2222A

V(BR)EBO

5.0
6.0

−
−

Vdc

Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

MPS2222A

ICEX

−

10

nAdc

−
−
−
−

0.01
0.01
10
10

ICBO

mAdcCollector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 50 Vdc, IE = 0, TA = 125°C)

MPS2222
MPS2222A
MPS2222
MPS2222A

Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)

MPS2222A

IEBO

−

100

nAdc

Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

MPS2222A

IBL

−

20

nAdc

35
50
75
35
100
50
30
40−
−
−
−
300
−
−
−

−
−
−
−

0.4
0.3
1.6
1.0

−
0.6
−
−

1.3
1.2
2.6
2.0

250
300

−
−

−

8.0

−
−

30
25

2.0
0.25

8.0
1.25

−
−

8.0
4.0

50
75

300
375

5.0
25

35
200

−

150

−

4.0

ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC= 10 mAdc, VCE = 10 Vdc, TA = −55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)

hFE

MPS2222A only
MPS2222
MPS2222A

Collector −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)

MPS2222
MPS2222A
MPS2222
MPS2222A

(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage (Note 1)...