Secundario

PD - 91341B

IRF540N
HEXFET® Power MOSFET
l l l l l l

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

D

VDSS = 100V RDS(on) = 44mΩ

G S

ID = 33A

Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely lowon-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating FactorGate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew

Max.
33 23 110 130 0.87 ± 20 16 13 7.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m)

Units
A W W/°C V A mJ V/ns °C

Thermal Resistance
Parameter
RθJC RθCS RθJAJunction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Typ.
––– 0.50 –––

Max.
1.15 ––– 62

Units
°C/W

www.irf.com

1
03/13/01

IRF540N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ

RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS

Parameter Drain-to-Source Breakdown VoltageBreakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source InductanceInput Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy ‚

Min. Typ. Max. Units Conditions 100 ––– ––– V VGS = 0V, ID = 250µA ––– 0.12 ––– V/°C Reference to 25°C, I D = 1mA ––– ––– 44 mΩ VGS = 10V, ID = 16A „ 2.0 ––– 4.0 V VDS = VGS , ID = 250µA 21 ––– ––– S VDS = 50V, ID = 16A„ ––– ––– 25 VDS = 100V, VGS = 0V µA ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C –––––– 100 VGS = 20V nA ––– ––– -100 VGS = -20V ––– ––– 71 ID = 16A ––– ––– 14 nC VDS = 80V ––– ––– 21 VGS = 10V, See Fig. 6 and 13 ––– 11 ––– VDD = 50V ––– 35 ––– ID = 16A ns ––– 39 ––– RG = 5.1Ω ––– 35 ––– VGS = 10V, See Fig. 10 „ Between lead, 4.5 ––– ––– 6mm (0.25in.) nH G from package ––– 7.5 ––– and center of die contact ––– 1960 ––– VGS = 0V ––– 250 ––– VDS = 25V ––– 40 ––– pF ƒ = 1.0MHz, SeeFig. 5 ––– 700… 185† mJ IAS = 16A, L = 1.5mH

D

S

Source-Drain Ratings and Characteristics
IS
ISM

VSD trr Qrr ton Notes:

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol 33 ––– ––– showing the A Gintegral reverse ––– ––– 110 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V „ ––– 115 170 ns TJ = 25°C, IF = 16A ––– 505 760 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)

ƒ ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C

‚ Starting TJ =...