Semiconductores

Páginas: 6 (1388 palabras) Publicado: 10 de marzo de 2013
BC559
Low Noise Transistors
PNP Silicon

MAXIMUM RATINGS
Rating

Symbol

BC559

BC560

Unit

Collector − Emitter Voltage

VCEO

−30

−45

Vdc

Collector − Base Voltage

VCBO

−30

−50

Vdc

Emitter − Base Voltage

VEBO

−5.0

Vdc

Collector Current — Continuous

IC

−100

mAdc

Total Device Dissipation @
TA = 25°C
Derate above 25°C

PDTotal Device Dissipation @
TC = 25°C
Derate above 25°C

PD

Operating and Storage Junction
Temperature Range

TJ, Tstg

http://onsemi.com

mW
625
5.0

1

mW/°C
Watt

1.5
12

°C
COLLECTOR
1

THERMAL CHARACTERISTICS
Characteristic

3

CASE 29−04, STYLE 17
TO−92 (TO−226AA)

mW/°C

− 55 to +150

2

Symbol

Max

Unit

Thermal Resistance, Junction toAmbient

RqJA

200

°C/W

Thermal Resistance, Junction to
Case

RqJC

83.3

°C/W

2
BASE
3
EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol

Characteristic

Min

Typ

Max

Unit

−30
−45







−30
−50







−5.0





Vdc







−15
−5.0

nAdc
μAdc





−15

nAdc

OFFCHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector − Base Breakdown Voltage
(IC = −10 μAdc, IE = 0)

V(BR)CEO

BC559
BC560

V(BR)CBO

BC559
BC560

Emitter − Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)

V(BR)EBO

Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
(VCB = −30 Vdc, IE = 0, TA = +125°C)

ICBO

Emitter Cutoff Current
(VEB = −4.0Vdc, IC = 0)

IEBO

© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 3

1

Vdc

Vdc

Publication Order Number:
BC559/D

BC559
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic

Symbol

Min

Typ

Max

Unit

100
100
180
380
120

150
270
290
500




460
800
800





−0.075
−0.3
−0.25−0.25
−0.6




−1.1





−0.55

−0.52
−0.55
−0.62



−0.7

fT



250



MHz

Ccbo



2.5



pF

240
450

330
600

500
900




0.5


2.0
10

ON CHARACTERISTICS
DC Current Gain
(IC = −10 μAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)

hFE

BC559B
BC559C/560C
BC559B
BC559C/560C
BC559

Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see note 1)
(IC = −100 mAdc, IB = −5.0 mAdc, see note 2)

VCE(sat)

Base−Emitter Saturation Voltage
(IC = −100 mAdc, IB = −5.0 mAdc)

VBE(sat)

Base−Emitter On Voltage
(IC = −10 μAdc, VCE = −5.0 Vdc)
(IC = −100 μAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)

VBE(on)



Vdc

Vdc
VdcSMALL−SIGNAL CHARACTERISTICS
Current − Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz)

BC559B
BC559C/BC560C

Noise Figure
(IC = −200 μAdc, VCE = −5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)
(IC = −200 μAdc, VCE = −5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz,Δf = 200 kHz)
NOTES:
1. IB is value for which IC = −11 mA at VCE = −1.0 V.
2. Pulse test = 300 μs − Duty cycle = 2%.

http://onsemi.com
2

hfe



dB
NF1
NF2

BC559
−1.0
VCE = −10 V
TA = 25°C

1.5

−0.9

1.0
0.8
0.6
0.4

VBE(on) @ VCE = −10 V

−0.6
−0.5
−0.4
−0.3

VCE(sat) @ IC/IB = 10

−0.1
−0.5

0
−0.1

−1.0 −2.0
−5.0 −10 −20
−50 −100 −200
IC,COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

−0.2

−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)

−50

−100

Figure 2. “Saturation” and “On” Voltages

10

400
300

7.0

100
80
60

C, CAPACITANCE (pF)

200

VCE = −10 V
TA = 25°C

40
30

TA = 25°C

Cib

5.0

3.0
Cob
2.0

20

−0.5 −0.7 −1.0

−2.0
−5.0 −7.0 −10
−20...
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