Semiconductores
Low Noise Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC559
BC560
Unit
Collector − Emitter Voltage
VCEO
−30
−45
Vdc
Collector − Base Voltage
VCBO
−30
−50
Vdc
Emitter − Base Voltage
VEBO
−5.0
Vdc
Collector Current — Continuous
IC
−100
mAdc
Total Device Dissipation @
TA = 25°C
Derate above 25°C
PDTotal Device Dissipation @
TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
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mW
625
5.0
1
mW/°C
Watt
1.5
12
°C
COLLECTOR
1
THERMAL CHARACTERISTICS
Characteristic
3
CASE 29−04, STYLE 17
TO−92 (TO−226AA)
mW/°C
− 55 to +150
2
Symbol
Max
Unit
Thermal Resistance, Junction toAmbient
RqJA
200
°C/W
Thermal Resistance, Junction to
Case
RqJC
83.3
°C/W
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
−30
−45
—
—
—
—
−30
−50
—
—
—
—
−5.0
—
—
Vdc
—
—
—
—
−15
−5.0
nAdc
μAdc
—
—
−15
nAdc
OFFCHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector − Base Breakdown Voltage
(IC = −10 μAdc, IE = 0)
V(BR)CEO
BC559
BC560
V(BR)CBO
BC559
BC560
Emitter − Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
(VCB = −30 Vdc, IE = 0, TA = +125°C)
ICBO
Emitter Cutoff Current
(VEB = −4.0Vdc, IC = 0)
IEBO
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Vdc
Vdc
Publication Order Number:
BC559/D
BC559
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
100
100
180
380
120
150
270
290
500
—
—
—
460
800
800
—
—
—
−0.075
−0.3
−0.25−0.25
−0.6
—
—
−1.1
—
—
—
−0.55
−0.52
−0.55
−0.62
—
—
−0.7
fT
—
250
—
MHz
Ccbo
—
2.5
—
pF
240
450
330
600
500
900
—
—
0.5
—
2.0
10
ON CHARACTERISTICS
DC Current Gain
(IC = −10 μAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
hFE
BC559B
BC559C/560C
BC559B
BC559C/560C
BC559
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see note 1)
(IC = −100 mAdc, IB = −5.0 mAdc, see note 2)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = −10 μAdc, VCE = −5.0 Vdc)
(IC = −100 μAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
VBE(on)
—
Vdc
Vdc
VdcSMALL−SIGNAL CHARACTERISTICS
Current − Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz)
BC559B
BC559C/BC560C
Noise Figure
(IC = −200 μAdc, VCE = −5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)
(IC = −200 μAdc, VCE = −5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz,Δf = 200 kHz)
NOTES:
1. IB is value for which IC = −11 mA at VCE = −1.0 V.
2. Pulse test = 300 μs − Duty cycle = 2%.
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2
hfe
—
dB
NF1
NF2
BC559
−1.0
VCE = −10 V
TA = 25°C
1.5
−0.9
1.0
0.8
0.6
0.4
VBE(on) @ VCE = −10 V
−0.6
−0.5
−0.4
−0.3
VCE(sat) @ IC/IB = 10
−0.1
−0.5
0
−0.1
−1.0 −2.0
−5.0 −10 −20
−50 −100 −200
IC,COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
−50
−100
Figure 2. “Saturation” and “On” Voltages
10
400
300
7.0
100
80
60
C, CAPACITANCE (pF)
200
VCE = −10 V
TA = 25°C
40
30
TA = 25°C
Cib
5.0
3.0
Cob
2.0
20
−0.5 −0.7 −1.0
−2.0
−5.0 −7.0 −10
−20...
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