Semiconductores

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D111

2N2219; 2N2219A NPN switching transistors
Product specification Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 1997 Sep 03

Philips Semiconductors

Product specification

NPN switching transistors
FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching • DC and VHF/UHFamplification, for 2N2219 only.
1 handbook, halfpage 2

2N2219; 2N2219A
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION

3 2

DESCRIPTION NPN switching transistor in a TO-39 metal package. PNP complement: 2N2905 and 2N2905A.

3

MAM317

1

Fig.1 Simplified outline (TO-39) and symbol.

QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N22192N2219A VCEO collector-emitter voltage 2N2219 2N2219A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency 2N2219 2N2219A toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA Tamb ≤ 25 °C IC = 10 mA; VCE = 10 V IC = 20 mA; VCE = 20 V; f = 100 MHz 250 300 − − − 250 MHz MHz ns open base − − − − 75 30 40 800 800 − V V mA mW open emitter − − 6075 V V CONDITIONS MIN. MAX. UNIT

1997 Sep 03

2

Philips Semiconductors

Product specification

NPN switching transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO 2N2219 2N2219A VCEO collector-emitter voltage 2N2219 2N2219A VEBO emitter-base voltage 2N2219 2N2219A IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collectorcurrent peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tcase ≤ 25 °C open base open base; IC ≤ 500 mA open collector − − − − − − − − − PARAMETER collector-base voltage CONDITIONS open emitter − −

2N2219; 2N2219A

MIN.

MAX. 60 75 30 40 5 6 800 800 200 800 3 +150 200 +150 V V V V V V

UNIT

mA mA mA mW W °C °C °C−65 − −65

THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 190 50 UNIT K/W K/W

1997 Sep 03

3

Philips Semiconductors

Product specification

NPN switching transistors
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO 2N2219 ICBO collectorcut-off current 2N2219A IEBO hFE hFE hFE hFE hFE hFE hFE emitter cut-off current DC current gain DC current gain DC current gain DC current gain 2N2219A DC current gain DC current gain DC current gain 2N2219 2N2219A VCEsat collector-emitter saturation voltage 2N2219 2N2219A VCEsat collector-emitter saturation voltage 2N2219 2N2219A VBEsat base-emitter saturation voltage 2N2219 2N2219A VBEsatbase-emitter saturation voltage 2N2219 2N2219A Cc Ce fT collector capacitance emitter capacitance 2N2219A transition frequency 2N2219 2N2219A F noise figure 2N2219A IC = 0.2 mA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = 20 mA; VCE = 20 V; f = 100 MHz; IE = ie = 0; VCB = 10 V IC = ic = 0; VEB = 500 mV IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC =150 mA; IB = 15 mA; note 1 IC = 150 mA; VCE = 1 V; note 1 IC = 150 mA; VCE = 10 V; note 1 IC = 500 mA; VCE = 10 V; note 1 IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tamb = 150 °C IC = 0; VEB = 3 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V PARAMETER collector cut-off current IE = 0; VCB = 50 V IE = 0; VCB = 50 V; Tamb = 150 °C CONDITIONS

2N2219; 2N2219A

MIN. − − − − − 3550 75 35 50 100 30 40 − − − − − 0.6 − − − − 250 300 −

MAX. 10 10 10 10 10 − − − − − 300 − − 400 300 1.6 1 1.3 1.2 2.6 2 8 25 − − 4

UNIT nA µA nA µA nA

IC = 10 mA; VCE = 10 V; Tamb = −55 °C

mV mV V V V V V V pF pF MHz MHz dB

1997 Sep 03

4

Philips Semiconductors

Product specification

NPN switching transistors

2N2219; 2N2219A

SYMBOL

PARAMETER

CONDITIONS...