Sensor De Humo

Páginas: 6 (1406 palabras) Publicado: 26 de febrero de 2013
CNY70
Vishay Semiconductors

Reflective Optical Sensor with Transistor Output
Description
The CNY70 has a compact construction where the
emitting light source and the detector are arranged in
the same direction to sense the presence of an object
by using the reflective IR beam from the object.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.Applications

94 9320

D Optoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc.
(optoelectronic
encoder
assemblies
for
transmission sensing).

Features
Marking aerea

D Compact construction in center-to-center spacing
of 0.1’

D No setting required
D High signal output
D Low temperature coefficient
D Detector provided with optical filter
D CurrentTransfer Ratio (CTR) of typical 5%

E

D

Top view

95 10930

Order Instruction
Ordering Code
CNY70

Document Number 83751
Rev. A4, 05–Apr–00

Sensing Distance
0.3 mm

Remarks

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CNY70
Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junctiontemperature

Test Conditions

tp ≤ 10 ms
Tamb ≤ 25°C

Symbol
VR
IF
IFSM
PV
Tj

Value
5
50
3
100
100

Unit
V
mA
A
mW
°C

Symbol
VCEO
VECO
IC
PV
Tj

Value
32
7
50
100
100

Unit
V
V
mA
mW
°C

Symbol
Ptot
Tamb
Tstg
Tsd

Value
200
–55 to +85
–55 to +100
260

Unit
mW
°C
°C
°C

Output (Detector)
Parameter
Collector emitter voltage
Emittercollector voltage
Collector current
Power dissipation
Junction temperature

Test Conditions

Tamb ≤ 25°C

Coupler
Parameter
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature

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2 (7)

Test Conditions
Tamb ≤ 25°C

2 mm from case, t ≤ 5 s

Document Number 83751
Rev. A4, 05–Jun–00

CNY70
Vishay SemiconductorsElectrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage

Test Conditions
IF = 50 mA

Symbol
VF

Min.

Typ.
1.25

Max.
1.6

Unit
V

Test Conditions
IC = 1 mA
IE = 100 mA
VCE = 20 V, If = 0, E = 0

Symbol
VCEO
VECO
ICEO

Min.
32
5

Typ.

Max.

Unit
V
V
nA

Output (Detector)
Parameter
Collector emitter voltage
Emitter collectorvoltage
Collector dark current

200

Coupler
Parameter
Collector current

Test Conditions
Symbol
Min.
Typ.
VCE = 5 V, IF = 20 mA,
IC1)
0.3
1.0
d = 0.3 mm (figure 1)
Cross talk current
VCE = 5 V, IF = 20 mA
ICX2)
(figure 1)
Collector emitter satuIF = 20 mA, IC = 0.1 mA,
VCEsat1)
ration voltage
d = 0.3 mm (figure 1)
1) Measured with the ‘Kodak neutral test card’, white side with90% diffuse reflectance
2) Measured without reflecting medium

~
~
~

Unit
mA

600

nA

0.3

V

Reflecting medium
(Kodak neutral test card)

~
~
~

d

Max.

Detector

Emitter

A

C

C

E

95 10808

Figure 1. Test circuit

Document Number 83751
Rev. A4, 05–Apr–00

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CNY70
Vishay Semiconductors
Typical Characteristics (Tamb =25_C, unless otherwise specified)
10
IC – Collector Current ( mA )

P tot – Total Power Dissipation ( mW )

300

Coupled device
200

Phototransistor
100
IR-diode

0

1

0.1

0.01

0.001
0

25

50

75

100

Tamb – Ambient Temperature ( °C )

95 11071

0.1

100

10

Figure 5. Collector Current vs. Forward Current

10
I C – Collector Current ( mA )1000.0

I F – Forward Current ( mA )

1

IF – Forward Current ( mA )

95 11065

Figure 2. Total Power Dissipation vs.
Ambient Temperature

100.0

10.0

1.0

0.1

Kodak Neutral Card
(White Side)
d=0.3

IF = 50 mA
20 mA

1

10 mA
5 mA
2 mA

0.1

1 mA
0.01

0
96 11862

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )

Figure 3. Forward...
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