Sensor De Humo
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
Description
The CNY70 has a compact construction where the
emitting light source and the detector are arranged in
the same direction to sense the presence of an object
by using the reflective IR beam from the object.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.Applications
94 9320
D Optoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc.
(optoelectronic
encoder
assemblies
for
transmission sensing).
Features
Marking aerea
D Compact construction in center-to-center spacing
of 0.1’
D No setting required
D High signal output
D Low temperature coefficient
D Detector provided with optical filter
D CurrentTransfer Ratio (CTR) of typical 5%
E
D
Top view
95 10930
Order Instruction
Ordering Code
CNY70
Document Number 83751
Rev. A4, 05–Apr–00
Sensing Distance
0.3 mm
Remarks
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CNY70
Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junctiontemperature
Test Conditions
tp ≤ 10 ms
Tamb ≤ 25°C
Symbol
VR
IF
IFSM
PV
Tj
Value
5
50
3
100
100
Unit
V
mA
A
mW
°C
Symbol
VCEO
VECO
IC
PV
Tj
Value
32
7
50
100
100
Unit
V
V
mA
mW
°C
Symbol
Ptot
Tamb
Tstg
Tsd
Value
200
–55 to +85
–55 to +100
260
Unit
mW
°C
°C
°C
Output (Detector)
Parameter
Collector emitter voltage
Emittercollector voltage
Collector current
Power dissipation
Junction temperature
Test Conditions
Tamb ≤ 25°C
Coupler
Parameter
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
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2 (7)
Test Conditions
Tamb ≤ 25°C
2 mm from case, t ≤ 5 s
Document Number 83751
Rev. A4, 05–Jun–00
CNY70
Vishay SemiconductorsElectrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Test Conditions
IF = 50 mA
Symbol
VF
Min.
Typ.
1.25
Max.
1.6
Unit
V
Test Conditions
IC = 1 mA
IE = 100 mA
VCE = 20 V, If = 0, E = 0
Symbol
VCEO
VECO
ICEO
Min.
32
5
Typ.
Max.
Unit
V
V
nA
Output (Detector)
Parameter
Collector emitter voltage
Emitter collectorvoltage
Collector dark current
200
Coupler
Parameter
Collector current
Test Conditions
Symbol
Min.
Typ.
VCE = 5 V, IF = 20 mA,
IC1)
0.3
1.0
d = 0.3 mm (figure 1)
Cross talk current
VCE = 5 V, IF = 20 mA
ICX2)
(figure 1)
Collector emitter satuIF = 20 mA, IC = 0.1 mA,
VCEsat1)
ration voltage
d = 0.3 mm (figure 1)
1) Measured with the ‘Kodak neutral test card’, white side with90% diffuse reflectance
2) Measured without reflecting medium
~
~
~
Unit
mA
600
nA
0.3
V
Reflecting medium
(Kodak neutral test card)
~
~
~
d
Max.
Detector
Emitter
A
C
C
E
95 10808
Figure 1. Test circuit
Document Number 83751
Rev. A4, 05–Apr–00
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CNY70
Vishay Semiconductors
Typical Characteristics (Tamb =25_C, unless otherwise specified)
10
IC – Collector Current ( mA )
P tot – Total Power Dissipation ( mW )
300
Coupled device
200
Phototransistor
100
IR-diode
0
1
0.1
0.01
0.001
0
25
50
75
100
Tamb – Ambient Temperature ( °C )
95 11071
0.1
100
10
Figure 5. Collector Current vs. Forward Current
10
I C – Collector Current ( mA )1000.0
I F – Forward Current ( mA )
1
IF – Forward Current ( mA )
95 11065
Figure 2. Total Power Dissipation vs.
Ambient Temperature
100.0
10.0
1.0
0.1
Kodak Neutral Card
(White Side)
d=0.3
IF = 50 mA
20 mA
1
10 mA
5 mA
2 mA
0.1
1 mA
0.01
0
96 11862
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )
Figure 3. Forward...
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