Sobre Transistores Mosfet Datasheet

UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motorcontrols, high efficient DC to DC converters and bridge circuits.
1

Power MOSFET

TO- 251

1

TO-252

1

TO-220

FEATURES
* RDS(ON) = 3.8Ω@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness

1

TO-220F

*Pb-free platingproduct number: 2N60L

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Order Number Package Normal Lead Free Plating 2N60-TA3-T 2N60L-TA3-T TO-220 2N60-TF3-T 2N60L-TF3-T TO-220F 2N60-TM3-T 2N60L-TM3-T TO-251 2N60-TN3-R 2N60L-TN3-R TO-252 2N60-TN3-T 2N60L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube TubeTube Tape Reel Tube

2N60L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating

(1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating Blank: Pb/Sn ,

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QW-R502-053,E

2N60
ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETERDrain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) SYMBOL VDSS VGSS IAR

Power MOSFET

RATINGS UNIT 600 V ±30 V 2.0 A TC = 25°C 2.0 A ID Drain Current Continuous TC = 100°C 1.26 A Drain Current Pulsed (Note 2) IDP 8.0 A Repetitive(Note 2) EAR 4.5 mJ Avalanche Energy Single Pulse(Note 3) EAS 140 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TC = 25°C 45 W Total Power DissipationPD Derate above 25°C 0.36 W/ Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, IAS=2.0A, VDD=50V,RG=25 Ω, Starting TJ = 25°C 4. ISD≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER Thermal Resistance Junction-Ambient PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F SYMBOL θJA RATINGS 112 112 54 54 12 12 4 4 UNIT

/W

Thermal Resistance Junction-Case

θJc

ELECTRICAL CHARACTERISTICS (TJ =25 , unless Otherwise specified.)
PARAMETER OffCharacteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Body Leakage Current SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS =0V, ID = 250µA VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V MIN 600 10 100 100 -100 0.4 2.0 3.8 2.25 270 40 5 4.0 5 TYP MAX UNIT V µA µA nA nA V/ V Ω S pF pF pF

BVDSS/ ID = 250 µA TJ VGS(TH) VDS = VGS, ID = 250µA RDS(ON) VGS = 10V, ID =1A gFS VDS = 50V, ID = 1A (Note 1) CISS COSS CRSS

VDS =25V, VGS =0V, f =1MHz

350 50 7

UNISONIC TECHNOLOGIES CO.,LTD
www.unisonic.com.tw

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QW-R502-053,E

2N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS Switching Characteristics Turn-On Delay Time tD (ON) Rise Time tR VDD =300V, ID =2.4A, RG=25Ω Turn-Off Delay Time tD(OFF) (Note 1,2) Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=2.4A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Drain-Source Diode...