Sus Vs Sbs

NTE6404 Silicon Unilateral Switch (SUS)
Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an“ideal” four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain triggering at lower values and toobtain transient free wave forms. Silicon Unilateral Switches are specifically designed and characterized for use in monostable and bistable applications where low cost is of prime importance.Applications: D SCR Triggers D Frequency Dividers D Ring Counters D Cross Point Switching D Over–Voltage Sensors Absolute Maximum Ratings: Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . –30V DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA DC Gate Current (Note 1, Note 2) . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Peak Recurrent Forward Current (1% duty cycle, 10µs pulse width, TA = +100°C) . . . . . . . . . . . 1A PeakNon–Recurrent Forward Current (10µs pulse width, TA = +25°C) . . . . . . . . . . . . . . . . . . . . 5A Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . –55° to +125°C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Note 1. Derate linearly to zero at125°C Note 2. This rating applicable only in OFF state. Maximum gate current in conducting state limited by maximum power rating. Electrical Characteristics: (TA = +25°C, unless otherwise...