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TL081 Wide Bandwidth JFET Input Operational Amplifier

December 1995

TL081 Wide Bandwidth JFET Input Operational Amplifier
General Description
The TL081 is a low cost high speed JFET input operational amplifier with an internally trimmed input offset voltage (BI-FET IITM technology) The device requires a low supply current and yet maintains a large gain bandwidth product and a fast slewrate In addition well matched high voltage JFET input devices provide very low input bias and offset currents The TL081 is pin compatible with the standard LM741 and uses the same offset voltage adjustment circuitry This feature allows designers to immediately upgrade the overall performance of existing LM741 designs The TL081 may be used in applications such as high speed integrators fast D Aconverters sample-and-hold circuits and many other circuits requiring low input offset voltage low input bias current high input impedance high slew rate and wide bandwidth The devices has low noise and offset voltage drift but for applications where these requirements are critical the LF356 is recommended If maximum supply current is important however the TL081C is the better choice

Features
Y Y YY Y Y Y Y Y

Y Y

Internally trimmed offset voltage Low input bias current Low input noise voltage Low input noise current Wide gain bandwidth High slew rate Low supply current High input impedance Low total harmonic distortion AV e 10 RL e 10k VO e 20 Vp-p BW e 20 Hzb20 kHz Low 1 f noise corner Fast settling time to 0 01%

15 mV 50 pA 25 nV 0Hz 0 01 pA 0Hz 4 MHz 13 V ms 1 8 mA 1012X k 002%

50 Hz 2 ms

Typical Connection

Simplified Schematic

TL H 8358 – 1

Connection Diagram
Dual-In-Line Package

TL H 8358 – 2

TL H 8358 – 4

Order Number TL081CP See NS Package Number N08E
BI-FET IITM is a trademark of National Semiconductor Corp C1995 National Semiconductor Corporation

TL H 8358

RRD-B30M125 Printed in U S A

Absolute Maximum Ratings
If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage Power Dissipation (Notes 1 and 6) Operating Temperature Range Tj(MAX) Differential Input Voltage
g 18V

Input Voltage Range (Note 2) Output Short Circuit Duration Storage Temperature Range Lead Temp (Soldering 10 seconds) ijA ESD rating to bedetermined

g 15V

Continuous
b 65 C to a 150 C

670 mW 0 C to a 70 C 115 C g 30V

260 C 120 C W

DC Electrical Characteristics (Note 3)
Symbol VOS DVOS DT IOS IB RIN AVOL Parameter Input Offset Voltage Average TC of Input Offset Voltage Input Offset Current Input Bias Current Input Resistance Large Signal Voltage Gain Conditions Min RS e 10 kX TA e 25 C Over Temperature RS e 10 kX Tje 25 C (Notes 3 4) Tj s 70 C Tj e 25 C (Notes 3 4) Tj s 70 C Tj e 25 C VS e g 15V TA e 25 C VO e g 10V RL e 2 kX Over Temperature VO VCM CMRR PSRR IS Output Voltage Swing Input Common-Mode Voltage Range Common-Mode Rejection Ratio Supply Voltage Rejection Ratio Supply Current VS e g 15V RL e 10 kX VS e g 15V RS s 10 kX (Note 5) 25 15
g 12 g 11 g 13 5

TL081C Typ 5 Max 15 20

Units mV mV mV C100 4 200 8 pA nA pA nA X V mV V mV V V V dB dB 28 mA

10 25 50 1012 100

a 15 b 12

70 70

100 100 18

AC Electrical Characteristics (Note 3)
Symbol SR GBW en in Parameter Slew Rate Gain Bandwidth Product Equivalent Input Noise Voltage Equivalent Input Noise Current Conditions Min VS e g 15V TA e 25 C VS e g 15V TA e 25 C TA e 25 C RS e 100X f e 1000 Hz Tj e 25 C f e 1000 Hz TL081CTyp 13 4 25 0 01 Max V ms MHz nV 0Hz pA 0Hz Units

Note 1 For operating at elevated temperature the device must be derated based on a thermal resistance of 120 C W junction to ambient for N package Note 2 Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage Note 3 These specifications apply for VS e g 15V and 0 C s TA s a 70 C VOS...