Tareas

2N3819

2N3819
N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications
operating up to 450MHz, and for analog switching requiring low
capacitance.
• Sourcedfrom process 50.
TO-92

1

1. Drain 2. Gate 3. Source

Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
VDG

Drain-Gate Voltage

ParameterRatings
25

Units
V

VGS

Gate-Source Voltage

-25

V

ID

Drain Current

50

mA

IGF

Forward Gate Current

10

mA

TSTG

Storage Temperature Range

-55 ~ 150

°C* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC=25°C unless otherwise noted
Symbol
OffCharacteristics

Parameter

Test Condition

Min.

Typ.

Max.

Units

2.0

nA

V(BR)GSS

Gate-Source Breakdwon Voltage

IG = 1.0µA, VDS = 0

IGSS

Gate Reverse Current

VGS =-15V, VDS = 0

VGS(off)

Gate-Source Cutoff Voltage

VDS = 15V, ID = 2.0nA

8.0

V

VGS

Gate-Source Voltage

VDS = 15V, ID = 200µA

-0.5

-7.5

V

VDS = 15V, VGS = 0

2.020

mA

2000

6500

µmhos

50

µmhos

25

V

On Characteristics
IDSS

Zero-Gate Voltage Drain Current

Small Signal Characteristics
gfs

Forward Transfer Conductance

VDS =15V, VGS = 0, f = 1.0KHz

goss

Output Conductance

VDS= 15V, VGS = 0, f = 1.0KHz

yfs

Reverse Transfer Admittance

VDS= 15V, VGS = 0, f = 1.0KHz

Ciss

Input Capacitance

VDS =15V, VGS = 0, f = 1.0KHz

8.0

pF

Crss

Reverse Transfer Capacitance

VDS = 15V, VGS = 0, f = 1.0KHz

4.0

pF

µmhos

1600

Thermal Characteristics TA=25°C unless otherwise noted...