Tecnico Electrnico

TK5A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

(π-MOSⅦ)

TK5A50D
Switching Regulator Applications
•
•
•
•

Unit: mm

Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.)
High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

AbsoluteMaximum Ratings (Ta = 25°C)
Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

500

V

Gate-source voltage

VGSS

±30

V

(Note 1)

ID

5

Pulse (t = 1 ms)
(Note 1)

IDP

20

Drain power dissipation (Tc = 25°C)

PD

35

W

Single pulse avalanche energy
(Note 2)

EAS

150

mJ

Avalanche current

IAR

5

A

Repetitive avalancheenergy (Note 3)

EAR

3.5

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

DC
Drain current

A
1: Gate
2: Drain
3: Source

⎯

JEDEC
JEITA

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significantchange in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individualreliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

3.57

°C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

°C/W

2

Note 1: Ensure that the channel temperature does not exceed 150°C.

1

Note 2:VDD = 90 V, Tch = 25°C (initial), L = 10.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.

1

3

2010-06-03

TK5A50D
Electrical Characteristics (Ta = 25°C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage currentIGSS

VGS = ±30 V, VDS = 0 V

⎯

⎯

±1

μA

Drain cut-off current

IDSS

VDS = 500 V, VGS = 0 V

⎯

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

500

⎯

⎯

V

Vth

VDS = 10 V, ID = 1 mA

2.4

⎯

4.4

V

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 2.5 A

⎯

1.3

1.5

Ω

Forward transfer admittance

⎪Yfs⎪

VDS = 10 V, ID =2.5 A

0.8

3.0

⎯

S

Input capacitance

Ciss

⎯

490

⎯

Reverse transfer capacitance

Crss

⎯

3

⎯

Output capacitance

Coss

⎯

55

⎯

⎯

18

⎯

⎯

40

⎯

Drain-source breakdown voltage
Gate threshold voltage

Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

Turn-on time

ton

ns

⎯

8

⎯

⎯

55

⎯

⎯

11

⎯

⎯6

⎯

⎯

tf

Turn-off time

VOUT

RL = 80 Ω

50 Ω

Switching time
Fall time

ID = 2.5 A

10 V
VGS
0V

tr

5

⎯

VDD ≈ 200 V

toff

Duty ≤ 1%, tw = 10 μs

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD ≈ 400 V, VGS = 10 V, ID = 5 A

pF

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)
CharacteristicsSymbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current (Note 1)

IDR

⎯

⎯

⎯

5

A

Pulse drain reverse current

IDRP

⎯

⎯

⎯

20

A

(Note 1)

Forward voltage (diode)

VDSF

IDR = 5 A, VGS = 0 V

⎯

⎯

−1.7

V

Reverse recovery time

trr

IDR = 5 A, VGS = 0 V,

⎯

1000

⎯

ns

Reverse recovery charge...