Tecnico Electromecanico

2N5401 / MMBT5401

2N5401

MMBT5401
C

E C B

TO-92
E

SOT-23
Mark: 2L

B

PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch for applications requiring high voltages.

Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter VoltageTA = 25°C unless otherwise noted

Parameter

Value
150 160 5.0 600 -55 to +150

Units
V V V mA °C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. Thefactory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5401625 5.0 83.3 200

Max
*MMBT5401 350 2.8 357

Units
mW mW/°C °C/W °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2001 Fairchild Semiconductor Corporation

2N5401/MMBT5401, Rev A

2N5401 / MMBT5401

PNP General Purpose Amplifier
(continued)

Electrical Characteristics
Symbol Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min

Max

Units

OFFCHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 120 V, IE = 0 VCB = 120 V, IE = 0, TA = 100°C VEB = 3.0 V, IC = 0 150 160 5.0 50 50 50 V V V nA µA nA

ON CHARACTERISTICS*
hFEDC Current Gain IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V IC = 50 mA, VCE = 5.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 50 60 50 240 0.2 0.5 1.0 1.0 V V V V

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS
fT Cobo NF Current Gain - Bandwidth Product OutputCapacitance Noise Figure IC = 10 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz IC = 250 µA, VCE = 5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 100 300 6.0 8.0 MHz pF dB

3

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0 Vtf=0 Xtf=0 Rb=10)

2N5401 / MMBT5401

PNP General Purpose Amplifier
(continued)

Typical Characteristics

VCESAT- COLLE CTOR-EMITTER VOLTAGE (V)

h FE - TYP ICAL PULSED CURRE NT GAIN

Typical Pulsed Current Gain vs Collector Current
200 VCE = 5V 150
125 °C

Collector-Emitter Saturation Voltage vs Collector Current
0.4 β = 10

0.3

100

25 °C

0.2
25 °C 125 °C

50

- 40 °C

0.1
- 40 °C

0 0.0001

0.001 0.01 0.1 I C - COLLECTOR CURRENT (A)

1

0 0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

V BE(O N)- BASE-E MITTER ON VOLTAGE (V)

V BESAT - BASE -EMITTER VOLTAG E (V)

Base-Emitter SaturationVoltage vs Collector Current
1
- 40 °C 25 °C

Base-Emitter ON Voltage vs Collector Current
1

0.8

0.8

- 40 °C 25 °C

0.6

125 °C

0.6
125 °C

0.4
β = 10

0.4

V C E = 5V

0.2 0.1

1 10 I C - COLLECTOR CURRENT ( mA)

100

0.2 0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

Collector-Cutoff Current vs Ambient Temperature
I CBO - COLLECTOR CURRENT (nA)
V CB = 10...