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Ordering number:ENN677D

PNP/NPN Epitaxial Planar Silicon Transistors

2SB816/2SD1046
For LF Power Amplifier, 50W Output Large Power Switching Applications
Features
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of built-in ballast resistance. · Goode dependence of fT on current and good HFcharacteristic.

Package Dimensions
unit:mm 2022A
[2SB816/2SD1046]
3.5 15.6 14.0 2.6 3.2 4.8 2.0

1.6

2.0 20.0 0.6

1.0 1 0.6 2 3

1.3

1.2 15.0 20.0

( ) : 2SB816

Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation JunctionTemperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C

5.45

5.45

1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB

Conditions

1.4

Ratings (–)150 (–)120 (–)6 (–)8 (–)12 80 150 –40 to +150

Unit V V V A A W
˚C ˚C

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Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current GainGain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, VCE=(–)5V, IC=(–)1A 60* 20 15 (220) 160 MHz pF pF IC=(–)5A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz Conditions Ratings min typ max (–)0.1 (–)0.1 200* Unit mA mA

* : The 2SB816/2SD1046 are classified by 1A hFE as follows :
Rank hFE D 60 to 120 E 100 to 200

Continued on next page.Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you beforeusing any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYOElectric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/4017KI/6284KI, MT No.677–1/4

2SB816/2SD1046
Continued from preceding page.
Parameter Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base BreakdownVoltage Turn-ON Time Fall Time Storage Time Symbol Conditions Ratings min typ 1.0 (–)150 (–)120 (–)120 (–)6 (0.22) 0.22 (0.37) 1.02 (0.93) 6.66 max 1.5 2.0 Unit V V V V V V µs µs µs µs µs µs

VBE VCE=(–)5V, IC=(–)1A VCE(sat) IC=(–)5A, IB=(–)0.5A V(BR)CBO IC=(–)5mA, IE=0 IC=(–)5mA, RBE=∞ V(BR)CEO IC=(–)50mA, RBE=∞ V(BR)EBO IE=(–)5mA, IC=0 ton tf tstg See specified test circuit. See specified testcircuit. See specified test circuit.

Swicthing Time Test Circuit
PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 200Ω 51Ω + 1µF VBE= --2V + 1µF VCC=20V RB 1Ω

RL 20Ω

IC=10IB1= --10IB2=1A (For PNP, the polarity is reversed.)

--8 --7

IC -- VCE
-0 20 m A
--16 0m A
2SB816

8

IC -- VCE
0m A
2SD1046

20

7

Collector Current, IC – A

--6 --5 --4 --3

Collector Current, IC – A0 --12

mA
--80mA

16

A 0m
120m A

6 5 4 3 2 1

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40mA

--40mA
--20mA

20mA

--2 --1 0 0 --10 --20 --30

IB=0
--40

0 0 10 20 30

IB=0
40 ITR08405

Collector-to-Emitter Voltage, VCE – V ITR08404
--6

Collector-to-Emitter Voltage, VCE – V
6

IC -- VBE
2SB816 VCE= --5V

IC -- VBE
2SD1046 VCE=5V

--5

5

Collector Current, IC – A...