TIC106 SERIES SILICON CONTROLLED RECTIFIERS
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5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA
K A G
1 2 3TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC106DRepetitive peak off-state voltage (see Note 1) TIC106M TIC106S TIC106N TIC106D Repetitive peak reverse voltage TIC106M TIC106S TIC106N Continuous on-state current at (or below) 80°C case temperature (seeNote 2) Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) Surge on-state current at (or below) 25°C (see Note 4) Peak positive gate current (pulse width ≤300 µs) Peak gate power dissipation (pulse width ≤ 300 µs) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for10 seconds IT(RMS) IT(AV) ITSM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V V UNITNOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. 3. This valuemay be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C. 4. This value applies for one 50 Hz half-sine-wave whenthe device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This valueapplies for a maximum averaging time of 20 ms.
APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
TIC106 SERIES SILICON...
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