Titulodescriptivo

MOSPEC
GENERAL PURPOSE SILICON RECTIFIER
VOLTAGE RANGE 50 TO 1000 Volts Current 1 Ampere FEATURES ¡¯ Low cost construction ¡¯ Low forward voltage drop ¡¯ Low reverse leakage ¡¯ High forward surgecurrent capability ¡¯ High temperature soldering guaranteed 260¢J /10 seconds, 0.375”(9.5 mm) lead length at 5 lbs(2.3kg) tension MECHANICAL DATA ¡¯ Case¡G Transfer Molded Plastic ¡¯ Epoxy: UL94V-Orate flame retardant ¡¯ Terminals¡G Solderable Per MIL-STD-202 Method 208 ¡¯ Polarity¡G Color band denotes cathode end ¡¯ Mounting position: Any ¡¯ Weight¡G 0.012 ounce. 0.33 gram (approx)

1N4001 THRU1N4007

DO-41

DIM A B C D

MILLIMETERS MIN 2.00 25.40 4.20 0.70 MAX 2.70 --5.20 0.90

MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS
* Rating at 25¢J ambient temperature unless otherwisespecified * Single phase,half wave. 60Hz, resistive or inductive load. * For capacitive load derate current by 20 %

Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DCBlocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Per Leg TC=125¢J Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) MaximumInstantaneous Forward Voltage ( IF =1.0 Amp TC = 25¢J ) Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25¢J ) ( Rated DC Voltage, TC = 100¢J ) Typical Junction Capacitance (Reverse Voltageof 4 volts & f=1 MHz) Typical Thermal Resistance Operating and Storage Junction Temperature Range

Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 VRRM VRWM VR VR(RMS) IF(AV) IFSM VF IR Cj RθjA TJ , Tstg 50 100 200 400 600 800 1000

Unit V

35

70

140

280 1.0 30 1.1 5.0 50 15 50 -65 to +175

420

560

700

V A A V uA pF ¢J /W ¢J

1N4001 thru 1N4007
FIG-1 FORWARDCURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT (Amp.) NSTANTANEOUS FORWARD CURRENT (Amp.)

FIG-2 TYPICAL FORWARD CHARACTERISITICS

CASE TEMPERATURE (¢J )

FORWARD VOLTAGE (Volts)...