Transistor Bd707/709/711 Bd708/712

BD707/709/711
BD708/712

®

COMPLEMENTARY SILICON POWER TRANSISTORS
s

COMPLEMENTARY PNP - NPN DEVICES

APPLICATION
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BD707,BD709 and BD711 are silicon
Epitaxial-Base NPN power transistors in Jedec
TO-220 plastic package. They are intented for
use in power linear and switching applications.
The BD707 and BD711complementary PNP
types are BD708 and BD712 respectively.

1

2

3

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol

Parameter
NPN
PNP

V CBO
VCER
V CEO
VEBO
IC
ICMIB
P tot
Ts tg
Tj

Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector PeakCurrent
Base Current
T otal Dissipation at Tc ≤ 25 o C
Storage Temperature
Max. Operating Junction Temperature

BD707
BD708
60
60
60

Value
BD709
80
80
80
5
12
18
5
75
-65 to 150150

Un it
BD711
BD712
100
100
100

V
V
V
V
A
A
A
W
o
C
o
C

For PNP types voltage and current values are negative

September 1999

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BD707/708/709/711/712
THERMAL DATAR thj -case
R thj -case

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient

Max
Max

o

1.67
70

o

C/W
C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unlessotherwise specified)
Symbo l
I CBO

Parameter
Collector Cut-off
Current (IE = 0)

Max.

Unit

for BD707/708
for BD709
for BD711/712
T case = 150 oC
for BD707/708
for BD709
forBD711/712

Test Con ditions
V CB = 60 V
V CB = 80 V
V CB = 100 V

100
100
100

µA
µA
µA

V CB = 60 V
V CB = 80 V
V CB = 100 V

1
1
1

mA
mA
mA

V CE = 30 V
V CE = 40 V
V CE = 50 V100
100
100

mA
mA
mA

1

mA

I CEO

Collector Cut-off
Current (IB = 0)

for BD707/708
for BD709
for BD711/712

IEBO

Emitter Cut-off Current
(I C = 0)

Min.

T yp....