Transistor Mosfet 2N60

SSP2N60B/SSS2N60B

SSP2N60B/SSS2N60B
600V N-Channel MOSFET
General Description

Features

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse inthe
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.

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2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V
Low gate charge ( typical 12.5 nC)
Low Crss ( typical 7.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Typical Characteristics

D

G

TO-220

GDS

GD S

SSP Series

TO-220F
SSSSeries

S

Absolute Maximum Ratings
Symbol
VDSS
ID

TC = 25°C unless otherwise noted

Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current

SSP2N60B

Drain Current

VGSS

Single Pulsed Avalanche Energy

IAR
EAR

2.0 *

A

1.3

1.3 *

A

6.0

6.0 *

A

Gate-Source Voltage

EAS

Units
V

2.0

- Continuous (TC = 100°C)
IDM

SSS2N60B600

dv/dt
PD
TJ, TSTG
TL

- Pulsed

(Note 1)

± 30

V

(Note 2)

120

mJ

Avalanche Current

(Note 1)

2.0

A

Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)

(Note 1)

5.4
5.5

-55 to +150

mJ
V/ns
W
W/°C
°C

300

°C

(Note 3)

- Derate above 25°C
Operating and Storage Temperature Range
Maximum leadtemperature for soldering purposes,
1/8" from case for 5 seconds

54
0.43

23
0.18

* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol
RθJC

Parameter
Thermal Resistance, Junction-to-Case Max.

RθCS

Thermal Resistance, Case-to-Sink Typ.

0.5

--

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient Max.

62.5

62.5

°C/W©2002 Fairchild Semiconductor Corporation

SSP2N60B
2.32

SSS2N60B
5.5

Units
°C/W

Rev. B, December 2002

Symbol

TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max

Units

600

--

--

V

--

0.65

--

V/°C

VDS = 600 V, VGS = 0 V

--

--

10

µA

VDS = 480 V, TC = 125°C

--

--

100

µA

Gate-Body LeakageCurrent, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

2.0

--

4.0

V

--

3.8

5.0

Ω

--

2.05

--

S

--

380

490

pF

--

35

46

pF

--

7.6

9.9

pF

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA∆BVDSS
/
∆TJ

Breakdown Voltage Temperature
Coefficient

ID = 250 µA, Referenced to 25°C

IDSS
IGSSF
IGSSR

Zero Gate Voltage Drain Current

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 1.0 A

gFS

Forward Transconductance

VDS = 40 V, ID = 1.0 A

(Note 4)

DynamicCharacteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

40

ns

110

ns

40

90

ns

--

4090

ns

--

VDS = 480 V, ID = 2.0 A,
VGS = 10 V

16
50

-(Note 4, 5)

Turn-Off Fall Time

Qg

---

VDD = 300 V, ID = 2.0 A,
RG = 25 Ω

12.5

17

nC

-(Note 4, 5)

2.2

--

nC

--

5.4

--

nC

A

Drain-Source Diode Characteristics and Maximum Ratings
IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

2.0

ISM

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