Transistor

NTE458 N–Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier
Features: D Very Low Noise D Low Gate Current Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)Gate–Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V Gate–Source Voltage, VGSO . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V Drain–Source Voltage (VDS = –2V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . 50V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Gate Current, IG . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation, PT . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Electrical Characteristics: (TA = +25°C unless otherwisespecified)
Parameter Gate Reverse Current Zero–Gate Voltage Drain Current Gate–Source Voltage Forward Transconductance Input Capacitance Reverse Transfer Capacitance Noise Frequency Symbol IGSS IDSS gfs CissCrss NF Test Conditions VGS = –20V, VDS = 0 VDS = 10V, VGS = 0 VDS = 10V, ID = 0.5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS =0, RG = 1kΩ, f = 10Hz VDS = 10V, VGS = 0, RG = 1kΩ, f = 100Hz VDS = 10V, VGS = 0, RG = 1kΩ, f = 1kHz Noise Voltage NV ID = 0.5mA, RG = 1kΩ, f = 10Hz to 1kHz (at VG = –3dB) Min – 0.5 4.0 4.0 – – – –...