Transistor

AT-41511, AT-41533
General Purpose, Low Noise NPN Silicon Bipolar Transistors

Data Sheet

Description
Avago’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41533 uses the 3 lead SOT-23, while the AT-41511 places the same die in the lower parasitic 4 lead SOT-143. Both packages are industrystandard, and compatible with high volume surface mount assembly techniques. The 4 micron emitter-to-emitter pitch of these transistors yields high performance products that can perform a multiplicity of tasks. The 14 emitter finger interdigitated geometry yields an intermediate-sized transistor with easy to match to impedances, low noise figure, and moderate power. Optimized for best performace from a5 to 8 volt bias supply, these transistors are also good performers at 2.7 V. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, or active mixer. An optimum noise match near 50 ohms at 900 MHz makes these devices particularly easy to use as LNAs. Typical amplifier designs at 900 MHz yield 1 dB noise figures with 15 dB or more associated gain at a 5 V, 5 mA bias,with good gain and noise figure obtainable at biases as low as 2 mA. The AT-415 series bipolar transistors are fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in thefabrication of these devices.

Features
x General Purpose NPN Bipolar Transistor x 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA x Characterized for 3, 5, and 8 Volt Use x SOT-23 and SOT-143 SMT Plastic Packages x Tape-and-Reel Packaging Option Available x Lead-free

Pin Connections and Package Marking
EMITTER COLLECTOR

415x
BASE EMITTER

SOT 143(AT-41511)

COLLECTOR

415x
BASE EMITTER

SOT 23 (AT-41533)

Notes: Top View. Package Marking provides orientation and identification. "x" is the date code.

AT-41511, AT-41533 Absolute Maximum Ratings
Symbol
VEBO VCBO VCEO IC PT Tj TSTG

Parameter
Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2,3]

Units
V V V mA mW °C °CAbsolute Maximum[1]
1.5 20 12 50 225 150 -65 to 150

Thermal Resistance:[2] Tjc =550°C/W
Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. TMounting Surface = 25°C. 3. Derate at 1.82 mW/°C for TC > 26°C.

Junction Temperature Storage Temperature

Electrical Specifications, TA = 25°C
AT-41511 Symbol
hFE ICBO IEBO

AT-41533 Max
270 0.21.0

Parameters and Test Conditions
Forward Current Transfer Ratio Collector Cutoff Current Emitter Cutoff Current VCE = 5 V IC = 5 mA VCB = 3 V VEB = 1 V

Units
μA μA

Min
30

Typ
150

Min
30

Typ
150

Max
270 0.2 1.0

Characterization Information, TA = 25°C
AT-41511 Symbol
NF GA P1dB G1dB IP3 |S21E|2

AT-41533 Min Typ
1.0 1.6 14.5 9 14.5 14.5 25 10.8 12.8 5.2Parameters and Test Conditions
Noise Figure VCE = 5 V, IC = 5 mA Associated Gain VCE = 5 V, IC = 5 mA Power at 1 dB Gain Compression (opt tuning) VCE = 5 V, IC = 25 mA Gain at 1 dB Gain Compression (opt tuning) VCE = 5 V, IC = 25 mA Output Third Order Intercept Point, VCE = 5 V, IC =25 mA (opt tuning) Gain in 50 Ω system; VCE = 5 V, IC = 5 mA f = 0.9 GHz f = 2.4 GHz f = 0.9 GHz f = 2.4 GHz f = 0.9 GHz f =0.9 GHz f = 0.9 GHz f = 0.9 GHz f = 2.4 GHz

Units
dB dB dBm dB dBm dB

Min

Typ
1.0 1.7 15.5 11 14.5 17.5 25

13.5

15.5 7.9

2

AT-41511, AT-41533 Typical Performance
3.0 25 mA 2.5
NOISE FIGURE (dB) NOISE FIGURE (dB) 2.5 NOISE FIGURE (dB) 2 mA 2.0 1.5 1.0 0.5 0 0.1 10 mA 5 mA 3.0 25 mA

3.0 2.5 25 mA 2.0 10 mA 1.5 1.0 0.5 0 0.1 5 mA

2.0 1.5 1.0 0.5 0 0.1

10 mA 2, 5...