Transistores

BC546/547/548/549/550

BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560

1

TO-92

1. Collector 2. Base 3. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BC546 : BC547/550 : BC548/549 Value 80 5030 65 45 30 6 5 100 500 150 -65 ~ 150 Units V V V V V V V V mA mW °C °C

VCEO

Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC546/547 : BC548/549/550

VEBO IC PC TJ TSTG

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO hFE VCE (sat) VBE (sat)VBE (on) fT Cob Cib NF Parameter Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA,IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE=5V, IC=200µA f=1KHz, RG=2KΩ VCE=5V, IC=200µA RG=2KΩ, f=30~15000MHz 580 Min. 110 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4 10 4 4 3 6 700 720 Typ. Max. 15 800 250 600 mV mV mV mV mV mV MHz pF pF dB dB dB dB Units nA

hFE Classification
Classification hFE
©2002 FairchildSemiconductor Corporation

A 110 ~ 220

B 200 ~ 450

C 420 ~ 800

Rev. A2, August 2002

BC546/547/548/549/550

Typical Characteristics

100

100

80

IB = 350µA IB = 300µA IB = 250µA IB = 200µA

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

IB = 400µA

VCE = 5V

10

60

40

IB = 150µA IB = 100µA

1

20

IB = 50µA
0 0 2 4 6 8 10 12 14 16 18 20
0.1 0.0 0.20.4 0.6 0.8 1.0 1.2

VCE[V], COLLECTOR-EMITTER VOLTAGE

VBE[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. Transfer Characteristic

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000

VCE = 5V
1000

IC = 10 IB

hFE, DC CURRENT GAIN

1000

V BE(sat)

100

100

10

V CE(sat)

1 1 10 100 1000

10 1 10 100 1000

IC[mA], COLLECTOR CURRENTIC[A], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

100

1000

fT, CURRENT GAIN-BANDWIDTH PRODUCT

Cob[pF], CAPACITANCE

f=1MHz IE = 0
10

VCE = 5V

100

1

10

0.1 1 10 100 1000

1 0.1

1

10

100

V CB[V], COLLECTOR-BASE VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 5. OutputCapacitance

Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

BC546/547/548/549/550

Package Dimensions

TO-92
4.58 –0.15
+0.25

0.46

14.47 ±0.40

±0.10

4.58 ±0.20

1.27TYP [1.27 ±0.20] 3.60
±0.20

1.27TYP [1.27 ±0.20]

0.38 –0.05

+0.10

3.86MAX

1.02 ±0.10

0.38 –0.05

+0.10

(R2.29)

(0.25)Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER

ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™

PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER®...