Transistores

Transistors

2SA0683, 2SA0684 (2SA683, 2SA684)
Silicon PNP epitaxial planar type
Unit: mm

■ Features
• Complementary pair with 2SC1383 and 2SC1384 • Allowing supply with the radial taping

■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 −1 −1.5 1 150 −55 to +150 V A AW °C °C V
1 2 3

Unit V
0.45+0.2 –0.1 (1.27) (1.27) 0.45+0.2 –0.1

13.5±0.5

0.7+0.3 –0.2

0.7±0.1

8.6±0.2

For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384

5.9±0.2

4.9±0.2

Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature2.54±0.15

■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SA0683 2SA0684 2SA0683 2SA6084 VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob IE = −10 µA, IC = 0 VCB =−20 V, IE = 0 VCE = −10 V, IC = −500 mA VCE = −5 V, IC = −1 A IC = −500 mA, IB = −50 mA IC = −500 mA, IB = −50 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 85 50 − 0.2 − 0.85 200 20 30 − 0.4 −1.2 V V MHz pF VCEO IC = −2 mA, IB = 0 Symbol VCBO Conditions IC = −10 µA, IE = 0 Min −30 −60 −25 −50 −5 − 0.1 340 V µA  V Typ Max Unit V

Emitter-base voltage (Collector open)Collector-base cutoff current (Emitter open) Forward current transfer ratio *1

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE Q 85 to 170 R 120 to 240 S 170 to 340 Note) The part numbers in the parenthesis show conventional part number.
Publication date: November 2002SJC00001BED

(3.2)

Collector-emitter voltage 2SA0683 (Base open) 2SA0684

1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package

1

2SA0683, 2SA0684
PC  Ta
1.2 −1.5

IC  VCE
Ta = 25°C IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA −1.2 VCE = −10 V Ta = 25°C

IC  I B

Collector power dissipation PC (W)

1.0

−1.25

−1.0

0.8

−1.0

0.6− 0.75

0.4

− 0.50

0.2

− 0.25

Collector current IC (mA)

Collector current IC (A)

− 0.8

− 0.6

− 0.4

− 0.2

0

0 0 20 40 60 80 100 120 140 160

0

−2

−4

−6

−8

−10

0

0

−2

−4

−6

−8

−10

−12

Ambient temperature Ta (°C)

Collector-emitter voltage VCE (V)

Base current IB (mA)

VCE(sat)  IC
Collector-emitter saturationvoltage VCE(sat) (V)
−100

VBE(sat)  IC
−100

hFE  IC
600 VCE = −10 V

Base-emitter saturation voltage VBE(sat) (V)

IC / IB = 10

IC / IB = 10

−10

−10

Forward current transfer ratio hFE

500

400 Ta = 75°C 300 25°C 200 −25°C

−1 Ta = 75°C 25°C −25°C

−1

Ta = −25°C 75°C

25°C

− 0.1

− 0.1

100

− 0.01 − 0.01

− 0.1

−1

−10

− 0.01 − 0.01

−0.1

−1

−10

0 − 0.01

− 0.1

−1

−10

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

fT  I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
200 180 VCB = −10 V Ta = 25°C

Cob  VCB
50 45 40 35 30 25 20 15 10 5 0 −1 −10 −100

VCER  RBE
Collector-emitter voltage (V) (Resistor between B and E) VCER
IE = 0 f = 1MHz Ta = 25°C
−120 IC = −10 mA Ta = 25°C

Transition frequency fT (MHz)

160 140 120 100 80 60 40 20 0 1 2 3 5 10 20 30 50 100

−100

−80

−60
2SA0684

−40
2SA0683

−20

0 0.1

1

10

100

Emitter current IE (mA)

Collector-base voltage VCB (V)

Base-emitter resistance RBE (kΩ)

2

SJC00001BED

2SA0683, 2SA0684
ICEO  Ta
104 VCE = −10 V
−10

Safe...