Transitor

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MMBF5484LT1/D

JFET Transistor
N–Channel
2 SOURCE 3 GATE

MMBF5484LT1
Motorola Preferred Device

1 DRAIN

MAXIMUM RATINGS
Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDGVGS(r) IG(f) PD 200 2.8 Tstg – 65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc
1 2

3

CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °CDEVICE MARKING
MMBF5484LT1 = 6B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = – 20 Vdc, VDS = 0) (VGS = – 20 Vdc, VDS = 0, TA = 100°C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) V(BR)GSS IGSS — — VGS(off) – 0.3 – 1.0 –0.2 – 3.0 nAdc µAdc Vdc – 25 — Vdc

ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 1.0 5.0 mAdc

SMALL– SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 1. FR– 5 = 1.0 |Yfs| |yos| 3000 — 6000 50 µmhos µmhos

 0.75  0.062 in.

Thermal Clad is a trademark of theBergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996

1

MMBF5484LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

SMALL– SIGNAL CHARACTERISTICS (Continued)
Input Capacitance (VDS =15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss Crss Coss — — — 5.0 1.0 2.0 pF pF pF

FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS = 15 Vdc, ID = 1.0 mAdc, YG′ = 1.0 mmhos) (RG = 1.0 kΩ, f = 100 MHz) (VDS = 15 Vdc, VGS = 0, YG′ = 1.0 µmhos) (RG = 1.0 MΩ, f = 1.0 kHz) Common Source PowerGain (VDS = 15 Vdc, ID = 1.0 mAdc, f = 100 MHz) NF — — Gps 16 3.0 2.5 25 dB dB

POWER GAIN
24 f = 100 MHz

20 PG , POWER GAIN (dB)

16

12

400 MHz Tchannel = 25°C VDS = 15 Vdc VGS = 0 V 0 2.0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14

8.0 4.0

Figure 1. Effects of Drain Current

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBF5484LT1
ReferenceDesignation NEUTRALIZING COIL INPUT TO 50 Ω SOURCE C1 C5 Rg′ L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 Ω LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3 VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 1–12 pF 1–12 pF 0.0015 µF 0.0015 µF 3.0 µH* 0.15 µH* 0.14 µH* 400 MHz 1.8 pF 17 pF 1.0 pF 0.8–8.0 pF 0.8–8.0 pF 0.001 µF 0.001 µF 0.2 µH** 0.03 µH** 0.022 µH**

L2

Adjust VGS for ID = 50 mA VGS < 0Volts *L1

NOTE:

The noise source is a hot–cold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). **L1

*L2 *L3

17 turns, (approx. — depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32″ ceramic coil form. Tuning provided by a powdered iron slug. 4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long, 3/8″ I.D. (AIR CORE). 3–1/2turns, AWG #18 enameled copper wire, 1/4″ long, 3/8″ I.D. (AIR CORE).

**L2 **L3

6 turns, (approx. — depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32″ ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8″ I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D. (AIR CORE).

Figure 2. 100 MHz and 400 MHz...