Triacss

B TW 66
BTW 67
SCR

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FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
ISOLATED PACKAGE :
INSULATED VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)

A
G
K

DESCRIPTION
The BTW 66 and BTW 67 Family Silicon Controlled
Rectifiers are high performance glass passivated
chips technology.
This general purpose Family Silicon ControlledRectifiers is designed for power supply up to
400Hz on resistive or inductive load.

RD 91
(Plastic)

ABSOLUTE RATINGS (limiting values)
Symbol

Parameter

Value

Unit

RMS on-state current
(180° conduction angle)

BTW 66
BTW 67

Tc=75 °C
Tc=75 °C

30
40

A

IT(AV)

Average on-state current (180° conduction
angle,single phase circuit)

BTW 66
BTW 67

Tc=75 °CTc=75 °C

20
25

A

ITSM

Non repetitive surge peak on-state current
( Tj initial = 25°C )

BTW 66
BTW 67

tp=8.3 ms

420
525

A

BTW 66
BTW 67

tp=10 ms

400
500

BTW 66
BTW 67

tp=10 ms

800
1250

A2s

100

A/µs

- 40 to + 150
- 40 to + 125

°C
°C

230

°C

IT(RMS)

I2t

I2t value

dI/dt

Critical rate of rise of on-state current
Gatesupply : IG = 100 mA diG/dt = 1 A/µs

Tstg
Tj

Storage and operating junction temperature range

Tl

Symbol

Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter

BTW 66- / BTW 67-

Unit

200
VDRM
VRRM
March 1995

Repetitive peak off-state voltage
Tj = 125 °C

400

600

800

1000

1200

200

400

600

800

1000

1200

V1/6

BTW 66 / BTW 67
THERMAL RESISTANCES
Symbol

Value

Unit

0.10

°C/W

BTW 66

1.2

°C/W

BTW 67

Rth (c-h)

Parameter

1.0

Contact (case to heatsink)

Rth (j-c) DC Junction to case for DC

GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W

PGM = 40W (tp = 20 µs)

IFGM = 8A (tp = 20 µs)

VRGM = 5 V.

ELECTRICAL CHARACTERISTICS
Symbol

TestConditions

Value

Unit

BTW 66

BTW 67

50

80

IGT

VD =12V

(DC) RL=33Ω

Tj=25°C

MAX

VGT

VD =12V

(DC) RL=33Ω

Tj=25°C

MAX

1.5

V

VGD

VD =VDRM RL =3.3kΩ

Tj= 125°C

MIN

0.2

V

mA

tgt

VD =VDRM IG = 200mA
dIG/dt = 1.5A/µs

Tj=25°C

TYP

2

µs

IL

IG= 1.2 IGT

Tj=25°C

TYP

50

mA

IH

IT= 500mA

Tj=25°C

MAX75

150

mA

Tj=25°C

MAX

2.2

2.0

V

Tj=25°C

MAX

gate open

VTM

BTW 66 ITM= 60A
BTW 67 ITM= 80A

IDRM
IRRM

VDRM
VRRM

dV/dt

Linear slope up to
VD =67%VDRM
gate open

tq

2/6

tp= 380µs

Rated
Rated

Tj= 125°C
VDRM≤ 800V
VDRM ≥ 1000V

VD =67%VDRM ITM= 60A VR = 75V
dITM/dt=30 A/µs
dVD/dt= 20V/µs

0.02

mA

6

Tj= 125°C

MIN500
250

V/µs

Tj= 125°C

TYP

100

µs

BTW66 / BTW 67
Package

VDRM / VRRM
V

Sensitivity Specification

30

200

X

400

X

600

X

800

X

1000

BTW 66
(Insulated)

IT(RMS)
A

X

BTW

1200

X
X

400

X
X

800

X

1000

X

1200

40

200
600

BTW 67
(Insulated)

X

Fig.1 : Maximum average power dissipation versusaverage on-state current (BTW 66).

Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (BTW 66).

F ig.3 : Maximum average power dissipation versus
average on-state current (BTW 67).

Fig.4 : Correlation between maximum average power
dissipation and maximum allowabletemperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (BTW 67).

3/6

BTW 66 / BTW 67
Fig.5 : Average on-state
temperature (BTW 66).

current

versus

case

Fig.7 : Relative variation of thermal impedance junction
to case versus pulse duration.

Fig.6 :
Average on-state
temperature (BTW 67).

current versus case

Fig.8 : Relative variation of...