Variadores de frecuencia

SKiiP 83 AHB 15 Absolute Maximum Ratings
Symbol Conditions 1)
Bridge Rectifier VRRM ID Theatsink = 80 °C IFSM/ITSM tp = 10 ms; sin. 180 °C, Tj = 25 °C I²t tp = 10 ms; sin. 180 °C, Tj = 25 °C IGBT Chopper VCES VGES IC ICM VRRM IF IFM Tj Tj Tstg Visol 1200 ± 20 95 / 65 190 / 130 1200 38 / 26 76 / 52 – 40 ... + 150 – 40 ... + 125 – 40 ... + 125 2500 V V A A V A A °C °C °C V 1500 125 1000 5000 V AA A²s

Values

Units

MiniSKiiP 8 SEMIKRON integrated intelligent Power SKiiP 83 AHB 15 half controlled 3-phase bridge rectifier + IGBT braking chopper
Case M8a

Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C

Freewheeling Diode 2) Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Diode & IGBT Thyristor AC, 1 min.

Characteristics
Symbol Conditions 1)
Diode -Rectifier VF VTO rT Rthjh VT VT (TO) rT Rthjh IGD VGT IGT IH IL dv/dtCR di/dtCR IF = 100 A Tj = 125 °C Tj = 125 °C Tj = 125 °C per diode IF = 120 A Tj = 25 °C Tj = 125 °C Tj = 125 °C per thyristor Tj = 125 °C Tj = 25 °C Tj = 25 °C Tj = 125 °C – – – – – – – – 5 – – – – 500 – – – – – – – – – 1,15 0,8 3,5 – – – – – – – – 250 600 – – 2,5(3,1) 35 70 450 70 18 5,0 – – – – 0,7 1,8 1,1 5 0,9 – 3 150 – – – 1253,0(3,7) 70 140 600 100 – – 0,35 V V mΩ K/W V V mΩ K/W mA V mA mA mA V/µs A/µs V ns ns ns ns mJ nF K/W

min.

typ.

max.

Units

UL recognized file no. E63532
• specification of temperature

Thyristor - Rectifier

sensor see part A
• common characteristics see

page B 16 – 4 Options
• also available with uncontrolled

rectifier (called 83 ANB 15)
• also available with powerfulIGBT - Chopper IC = 75 A Tj = 25 (125) °C VCEsat td(on) VCC = 600 V; VGE = ± 15 V tr IC = 75 A; Tj = 125 °C Rgon = Rgoff = 15 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT

chopper, for characteristics please refer to SKiiP 83 AC 12 • also available with full controlled rectifier (called 83 ATB 15)
1) 2)

Theatsink = 25 °C, unless otherwisespecified CAL = Controlled Axial Lifetime Technology (soft and fast recovery)

© by SEMIKRON

0698

B 16 – 77

MiniSKiiP 8 SEMIKRON integrated intelligent Power SKiiP 83 AHB 15 half controlled 3-phase bridge rectifier + IGBT braking chopper
Case M8a

SKiiP 83 AHB 15 Characteristics
Symbol Conditions
Diode 2) - Freewheeling VF = VEC VTO rT IRRM Qrr Eoff Rthjh RTS M1 Case IF = 25 A Tj = 25(125) °C Tj = 125 °C Tj = 125 °C IF = 25 A; VR = – 600 V diF/dt = – 500 A/µs VGE = 0 V, Tj = 125 °C per diode T = 25 / 100 °C case to heatsink, SI Units mechanical outline see pages B 16 –13 and B 16 – 14 – – – – – – – 2,0(1,8) 1,0 32 25 4,5 1,0 – 2,5(2,3) 1,2 44 – – – 1,2 V V mΩ A µC mJ K/W
1)

min.

typ.

max.

Units

Temperature Sensor 1000 / 1670

Ω
3,5 Nm

Mechanical Data 2,5 –M8a

B 16 – 78

0698

© by SEMIKRON

IC [A] 150 135 17V 120 15V 105 90 75 60 45 30 15 0 0 1 2 3 13V 11V 9V 7V

82AC1201

IC [A] 150 135 17V 120 15V 105 90 75 60 45 30 15 0 13V 11V 9V 7V

82AC1202

4

5 VCE [V]

0

1

2

3

4

5 VCE [V]

Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C

Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C

82AC1203.xls82AC1204.xls

30 mJ 25
Eon

Tj = 125 °C VCE = 600 V VGE = ± 15 V RG = 15 Ω

24 mJ 18

Eon

Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 75 A

20

15
Eoff

12
Eoff

10

6 5 E 0 0 IC 30 60 90 120 A 150 E 0 0 RG 10 20 30 Ω 40

Fig. 3 Turn-on /-off energy = f (IC)
VGE [V] 20 18 600V 16 800V 14 12 10 8 6 4 2 0 0 120 240 360 480 QG [nC]
82AC1205

Fig. 4 Turn-on /-off energy = f(RG) ICpuls = 75 A VGE = 0 V f = 1 MHz

Fig. 5 Typ. gate charge characteristic
© by SEMIKRON

Fig. 6 Typ. capacitances vs. VCE
0698 B 16 – 79

Fig. 7 Gate trigger characteristics

B 16 – 80

0698

© by SEMIKRON

MiniSKiiP 1200 V
ICop / IC 1.2
Mini1207

Tj = 150 °C VGE = ≥ 15 V

1.0

0.8

0.6

0.4

0.2

0 0 25 50 75 100 125 150 Th [°C]

Fig. 7 Rated current of...