Varios

BC556/557/558/559/560

BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, VCEO= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550

TO-92

1

1. Collector2. Base 3. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO

Parameter
Collector-Base Capacitance
: BC556
: BC557/560
: BC558/559VCEO

Value
-80
-50
-30

V
V
V

-65
-45
-30

Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559

Units

V
V
V

VEBO

Emitter-Base Voltage

-5

V

ICCollector Current (DC)

-100

mA

PC

Collector Dissipation

500

mW

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-65 ~ 150

°C

Electrical CharacteristicsTa=25°C unless otherwise noted
Symbol
ICBO

Parameter
Collector Cut-off Current

Test Condition
VCB= -30V, IE=0

Min.

Typ.

Max.
-15

hFE
VCE
(sat)

DC Current Gain

VCE= -5V,IC=2mA

110

Collector-Emitter Saturation Voltage

IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA

-90
-250

-300
-650

VBE (sat)

Collector-Base Saturation Voltage

IC= -10mA, IB=-0.5mA
IC= -100mA, IB= -5mA

-700
-900

VBE (on)

Base-Emitter On Voltage

VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA

-600

fT

Current Gain Bandwidth Product

VCE= -5V, IC= -10mA,f=10MHz

Cob

Output Capacitance
Noise Figure

VCE= -5V, IC= -200µA
f=1KHz, RG=2KΩ
VCE= -5V, IC= -200µA
RG=2KΩ, f=30~15000MHz

800

-660

: BC556/557/558
: BC559/560
: BC559
: BC560

mVmV
mV
mV

-750
-800

VCB= -10V, IE=0, f=1MHz

NF

Units
nA

150

mV
mV
MHz

6
2
1
1.2
1.2

pF

10
4
4
2

dB
dB
dB
dB

hFE Classification
Classification

AB

C

hFE

110 ~ 220

200 ~ 450

420 ~ 800

©2000 Fairchild Semiconductor International

Rev. A, February 2000

BC556/557/558/559/560

Typical Characteristics

1000

-50...