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TIC226 SERIES SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997

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8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3)
MT1 MT2 G
1 2 3 TO-220 PACKAGE (TOP VIEW)

Pin 2 is in electrical contact with the mounting base.
MDC2ACA

absolute maximum ratings over operating casetemperature (unless otherwise noted)
RATING TIC226D Repetitive peak off-state voltage (see Note 1) TIC226M TIC226S TIC226N Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) Peak on-state surge current full-sine-wave (see Note 3) Peak on-state surge current half-sine-wave (see Note 4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulsewidth ≤ 200 µs) Average gate power dissipation at (or below) 85°C case temperature (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 8 70 80 ±1 2.2 0.9 -40 to +110 -40 to +125 230 A A A A W W °C °C °C V UNIT

NOTES: 1. These values applybidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 320 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the devicehas returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging timeof 20 ms.

electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER IDRM Repetitive peak off-state current Peak gate trigger current VD = rated VDRM Vsupply = +12 V† IGTM Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† Vsupply = +12 V† VGTM Peak gate trigger voltage Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† † All voltages are with respect to MainTerminal 1. TEST CONDITIONS IG = 0 RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω TC = 110°C tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs 2 -12 -9 20 0.7 -0.8 -0.8 0.9 2 -2 -2 2 V MIN TYP MAX ±2 50 -50 -50 mA UNIT mA

PRODUCT

INFORMATION

Information is current as of publication date. Productsconform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

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TIC226 SERIES SILICON TRIACS
APRIL 1971 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER VTM IH IL dv/dt dv/dt(c) Peak on-state voltage Holdingcurrent Latching current Critical rate of rise of off-state voltage Critical rise of commutation voltage ITM = ±12 A Vsupply = +12 V† Vsupply = -12 V† Vsupply = +12 V† Vsupply = -12 V† VDRM = Rated VDRM VDRM = Rated VDRM TEST CONDITIONS IG = 50 mA IG = 0 IG = 0 (see Note 7) IG = 0 ITRM = ±12 A TC = 110°C TC = 85°C ±5 ±100 (see Note 6) Init’ ITM = 100 mA Init’ ITM = -100 mA MIN TYP ±1.6 5 -9 MAX ±2.130 -30 50 -50 UNIT V mA mA V/µs V/µs

† All voltages are with respect to Main Terminal 1. NOTES: 6. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator...