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C106D Thyristors logic level
Product specification July 2001

Philips Semiconductors

Product specification

Thyristors logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly tomicrocontrollers, logic integrated circuits and other low power gate trigger circuits.

C106D
QUICK REFERENCE DATA
SYMBOL VDRM VRRM IT(AV) IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. 400 2.5 4 38 UNIT V A A A

PINNING - SOT32
PIN 1 2 3 DESCRIPTION cathode anode gate

PIN CONFIGURATION

SYMBOLa

k

Top view

1

2

3
MBC077 - 1

g

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current half sine wave; Tmb ≤ 113 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior tosurge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs CONDITIONS MIN. -40 MAX. 400
1

UNIT V A A A A A2s A/µs A V V W W ˚C ˚C

2.5 4 35 38 6.1 50 2 5 5 5 0.5 150 1252

I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj

I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate powerAverage gate power over any 20 ms period Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
July 2001 2 Rev1.000

Philips Semiconductors

Product specification

Thyristors logic level

C106D

THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a CONDITIONS MIN. TYP. MAX. 2.5 95 UNIT K/W K/W Thermal resistance junction to mounting base Thermal resistance in free air junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER IGT IL IH VT VGT ID, IR Gatetrigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C MIN. 0.1 TYP. 15 0.17 0.10 1.23 0.4 0.2 0.1 MAX. 200 10 6 1.8 1.5 0.5 UNIT µA mA mA V V V mADYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER dVD/dt tgt tq Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 100 Ω ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 8 A; VR = 10 V; dITM/dt =10 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ MIN. TYP. 50 2 100 MAX. UNIT V/µs µs µs

July 2001

3

Rev 1.000

Philips Semiconductors

Product specification

Thyristors logic level

C106D

6 5 4 3 2 1 0

Ptot / W
conduction angle degrees 30 60 90 120 180 form factor

Tmb(max) / C

ITSM / A

110 112.5

40
IT I TSM T time

a
4 2.8 2.2 1.9 1.57

1.9 2.2 2.8 4

a = 1.57 115117.5 120

30

Tj initial = 25 C max

20

10

122.5 125 3

0

0.5

1

1.5 IF(AV) / A

2

2.5

0

1

10 100 Number of half cycles at 50Hz

1000

Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV).
1000 ITSM / A

Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus...