A Comparative Study Of Methods For Thin-Films And Surface Analysis
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A comparative study of methods for thin-film and surface analysis
This article has been downloaded from IOPscience. Please scroll down to see the full text article. 1984 Rep. Prog. Phys. 47 221 (http://iopscience.iop.org/0034-4885/47/3/001) View the table of contents for this issue, or go to the journal homepage for moreDownload details: IP Address: 132.248.5.2 The article was downloaded on 19/10/2010 at 03:17
Please note that terms and conditions apply.
Rep. Prog. Phys., Vol 47, pp 221-344, 1984. Printed in Great Britain
A comparative study of methods for thin-film and surface analysis
H W Wernert and R P H GartenS
t Philips Research Laboratories, PO Box 80 000, NL 5600 JA Eindhoven, The Netherlands
$ Institutfur Spektrochemie und angewandte Spektroskopie, PO Box 7 7 8 , D-4600 Dortmund 1 , West Germany
Abstract
A number of features characteristic of different thin-film analytical methods are reviewed and evaluated. The principles, approaches for quantification and prominent problems of the most commonly used methods (ESCA, AES, SIMS, LEIS, RBS and NRA) are discussed. Evaluation of the specialadvantages and disadvantages of the different methods points out the need for a synergetic multi-method approach in thin-film analysis.
This review was received in June 1983.
0034-4885/84/030221+ 123 $09.00 @ 1984 The Institute of Physics
221
222
H W Werner and R P H Garten
Contents List of symbols 1. Introduction 1.1. Definition of the analytical problem 1.2. Short historical review of thedevelopment of thin-film analysis 2. Description of the different techniques 2.1. Electron spectrometries for surface analysis-general considerations 2.1.1. Principles 2.1.2. Characteristic features 2.1.3. The mean free path 2.1.4. Instrumentation 2.2. Electron spectroscopy for chemical analysis, ESCA 2.2.1. Principles of ESCA 2.2.2. The chemical shift 2.2.3. Quantitative ESCA 2.2.4. Instrumentation2.2.5. Characteristic features in ESCA interpretation 2.3. Auger electron spectroscopy, AES 2.3.1. Principles of AES 2.3.2. Instrumentation and spectra interpretation 2.3.3. Quantitative AEs-the back-scattering factor 2.3.4. Characteristic features of AES 2.4. Secondary-ion mass spectrometry, SIMS 2.4.1. Principles of sirvis 2.4.2. Quantitative sim-the secondary-ion yield 2.4.3. Instrumentation andmodes of SIMS (including SNMS and
FAB)
2.4.4. Problems encountered in SlMS analysis 2.5. Low-energy ion scattering spectrometry, LEIS 2.5.1. Principles of LEIS 2.5.2. Quantitative analysis by LEIS 2.5.3. Characteristic features of LEIS 2.5.4. Applications of LEIS 2.6. High-energy ion (back-)scattering spectrometry, HEIS 2.6.1. Principles of HEIS 2.6.2. Quantitative analysis by HEIS 2.6.3. Recoildetection analysis 2.6.4. Channelling and surface channelling 2.7. Nuclear reaction analysis, NRA 2.7.1. The energy analysis method 2.7.2. The resonance method
Comparative study of thin-film and surface analysis
Optical emission methods: GDOES, BLE AND LOES 2.8.1. Glow discharge optical emission spectrometry, GDOES 2.8.2. Bombardment-induced light emission, BLE 2.8.3. Laser optical emissionspectrometry, LOES 2.9. X-ray emission analysis 2.9.1. X-ray fluorescence analysis, XRFA 2.9.2. Electron microprobe, EMP 2.9.3. Proton-induced x-ray emission, PIXE 2.9.4. Characteristic features 2.9.5. Total reflection x-ray fluorescence analysis, TRXRFA 2.10. Surface-enhanced Raman scattering, SERS 2.11. Attenuated total reflection infrared spectrometry, ATRIR 2.12. Ellipsometry 2.13. Low-energyelectron diffraction, LEED and micro-RHEED 2.14. Laser microprobe, LMP Selected parameters and analytical features 3.1. Definitions of the objective 3.1.1. Physical structure 3.1.2. Chemical structure 3.2. Spatial resolution 3.2.1. Bulk versus thin-film techniques 3.2.2. Destructive versus non-destructive techniques 3.2.3. Depth resolution-information depth of thin-film analytical methods 3.2.4....
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My IOPscience
A comparative study of methods for thin-film and surface analysis
This article has been downloaded from IOPscience. Please scroll down to see the full text article. 1984 Rep. Prog. Phys. 47 221 (http://iopscience.iop.org/0034-4885/47/3/001) View the table of contents for this issue, or go to the journal homepage for moreDownload details: IP Address: 132.248.5.2 The article was downloaded on 19/10/2010 at 03:17
Please note that terms and conditions apply.
Rep. Prog. Phys., Vol 47, pp 221-344, 1984. Printed in Great Britain
A comparative study of methods for thin-film and surface analysis
H W Wernert and R P H GartenS
t Philips Research Laboratories, PO Box 80 000, NL 5600 JA Eindhoven, The Netherlands
$ Institutfur Spektrochemie und angewandte Spektroskopie, PO Box 7 7 8 , D-4600 Dortmund 1 , West Germany
Abstract
A number of features characteristic of different thin-film analytical methods are reviewed and evaluated. The principles, approaches for quantification and prominent problems of the most commonly used methods (ESCA, AES, SIMS, LEIS, RBS and NRA) are discussed. Evaluation of the specialadvantages and disadvantages of the different methods points out the need for a synergetic multi-method approach in thin-film analysis.
This review was received in June 1983.
0034-4885/84/030221+ 123 $09.00 @ 1984 The Institute of Physics
221
222
H W Werner and R P H Garten
Contents List of symbols 1. Introduction 1.1. Definition of the analytical problem 1.2. Short historical review of thedevelopment of thin-film analysis 2. Description of the different techniques 2.1. Electron spectrometries for surface analysis-general considerations 2.1.1. Principles 2.1.2. Characteristic features 2.1.3. The mean free path 2.1.4. Instrumentation 2.2. Electron spectroscopy for chemical analysis, ESCA 2.2.1. Principles of ESCA 2.2.2. The chemical shift 2.2.3. Quantitative ESCA 2.2.4. Instrumentation2.2.5. Characteristic features in ESCA interpretation 2.3. Auger electron spectroscopy, AES 2.3.1. Principles of AES 2.3.2. Instrumentation and spectra interpretation 2.3.3. Quantitative AEs-the back-scattering factor 2.3.4. Characteristic features of AES 2.4. Secondary-ion mass spectrometry, SIMS 2.4.1. Principles of sirvis 2.4.2. Quantitative sim-the secondary-ion yield 2.4.3. Instrumentation andmodes of SIMS (including SNMS and
FAB)
2.4.4. Problems encountered in SlMS analysis 2.5. Low-energy ion scattering spectrometry, LEIS 2.5.1. Principles of LEIS 2.5.2. Quantitative analysis by LEIS 2.5.3. Characteristic features of LEIS 2.5.4. Applications of LEIS 2.6. High-energy ion (back-)scattering spectrometry, HEIS 2.6.1. Principles of HEIS 2.6.2. Quantitative analysis by HEIS 2.6.3. Recoildetection analysis 2.6.4. Channelling and surface channelling 2.7. Nuclear reaction analysis, NRA 2.7.1. The energy analysis method 2.7.2. The resonance method
Comparative study of thin-film and surface analysis
Optical emission methods: GDOES, BLE AND LOES 2.8.1. Glow discharge optical emission spectrometry, GDOES 2.8.2. Bombardment-induced light emission, BLE 2.8.3. Laser optical emissionspectrometry, LOES 2.9. X-ray emission analysis 2.9.1. X-ray fluorescence analysis, XRFA 2.9.2. Electron microprobe, EMP 2.9.3. Proton-induced x-ray emission, PIXE 2.9.4. Characteristic features 2.9.5. Total reflection x-ray fluorescence analysis, TRXRFA 2.10. Surface-enhanced Raman scattering, SERS 2.11. Attenuated total reflection infrared spectrometry, ATRIR 2.12. Ellipsometry 2.13. Low-energyelectron diffraction, LEED and micro-RHEED 2.14. Laser microprobe, LMP Selected parameters and analytical features 3.1. Definitions of the objective 3.1.1. Physical structure 3.1.2. Chemical structure 3.2. Spatial resolution 3.2.1. Bulk versus thin-film techniques 3.2.2. Destructive versus non-destructive techniques 3.2.3. Depth resolution-information depth of thin-film analytical methods 3.2.4....
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